W29GL032C Datasheet, PDF (38/66 Pages) Winbond – 32M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL032C
8.5 AC Characteristics
Description
Valid Data Output after Address
EVIO=VCC
EVIO=1.65V to VCC
Page Access Time
EVIO=VCC
EVIO=1.65V to VCC
Valid data output after #CE low
EVIO=VCC
EVIO=1.65V to VCC
Valid data output after #OE low
EVIO=VCC
EVIO=1.65V to VCC
Read Period Time
EVIO=VCC
EVIO=1.65V to VCC
Data Output High Impedance after #OE high
Data Output High Impedance after #CE high
Output Hold Time from the earliest rising edge of address,
#CE, #OE
Write Period Time
Command write period time
Address Setup Time
Address Setup Time to #OE low during Toggle Bit Polling
Address Hold Time
Address Hold Time from #CE or #OE High during Toggle Bit
Polling
Data Setup Time
Data Hold Time
VCC Setup Time
Chip enable Setup Time
Chip enable Hold Time
Output enable Setup Time
Read
Output enable Hold Time
Toggle & Data#
Polling
#WE Setup Time
#WE Hold Time
#CE Pulse Width
#CE Pulse With High
#WE Pulse Width
#WE Pulse Width High
Program/Erase active time by RY/#BY
EVIO=VCC
EVIO=1.65V to VCC
Read Recover Time before Write (#OE High to #WE Low)
Read Recover Time before Write (#OE High to #CE Low)
16-Word Write Buffer Program Operation
Effective Write Buffer Program
Operation
Word
Accelerated Effective Write Buffer
Operation
Per Word
Program Operation
Byte
Program Operation
Word
ACC 16-Word Program Operation
Symbol
ALT STD
tACC tAA
tPACC tPA
tCE
tOE
tRC
tDF
tDF
tOH
tWC
tCWC
tAS
tASO
tAH
tAHT
tDS
tDH
tVCS
tCS
tCH
tOES
tOEH
VCC=2.7V~3.6V
Min Typ Max Units
70 ns
80 ns
25 ns
30 ns
70 ns
80 ns
25 ns
35 ns
70
ns
80
ns
20 ns
20 ns
0
ns
70
ns
70
ns
0
ns
15
ns
45
ns
0
ns
30
ns
0
ns
35
µs
0
ns
0
ns
0
ns
0
ns
10
ns
tWS 0
ns
tWH 0
ns
tCP tCEPW 35
ns
tCPH tCEPWH 30
ns
tWP 35
ns
tWPH 30
ns
tBUSY
70 ns
80 ns
tGHWL 0
ns
tGHEL 0
ns
tWHWH1
96
µs
tWHWH1
6
µs
tWHWH1
tWHWH1
tWHWH1
tWHWH1
4.8
µs
6 200 µs
6 200 µs
77
µs
32