W25X10BV Datasheet, PDF (38/51 Pages) Winbond – 1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI

W25X10BV/20BV/40BV
10.3 Power-up Timing and Write Inhibit Threshold
PARAMETER
VCC (min) to /CS Low
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
SYMBOL
tVSL⁽¹⁾
tPUW⁽¹⁾
VWI⁽¹⁾
SPEC
MIN
10
1
1
Note:
1. These parameters are characterized only.
MAX
10
2
UNIT
µs
ms
V
Figure 25. Power-up Timing and Voltage Levels
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