W2465A Datasheet, PDF (2/9 Pages) Winbond – 8K X 8 High Speed CMOS Static RAM

W2465A
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Supply Voltage to VSS Potential
Input/Output to VSS Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
RATING
-0.5 to +7.0
-0.5 to VDD +0.5
1.0
-65 to +150
0 to +70
UNIT
V
V
W
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
TRUTH TABLE
CS1
CS2
OE
H
X
X
X
L
X
L
H
H
L
H
L
L
H
X
WE
MODE
X Not Selected
X Not Selected
H Output Disable
H Read
L Write
I/O1−I/O8
High Z
High Z
High Z
Data Out
Data In
VDD CURRENT
ISB, ISB1
ISB, ISB1
IDD
IDD
IDD
OPERATING CHARACTERISTICS
(VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
Input Low Voltage
VIL
-
Input High Voltage
VIH
-
Input Leakage Current ILI
VIN = VSS to VDD
Output Leakage
Current
ILO
VI/O = VSS to VDD,
CS1 _{= VIH or CS2 = VIL}
Output Low Voltage
or OE = VIH or WE = VIL
VOL IOL = +8.0 mA
Output High Voltage VOH IOH = -4.0 mA
Operating Power
Supply Current
Standby Power
Supply Current
IDD
CS1 = VIL
12
CS2 = VIH
I/O = 0 mA
15
Cycle = MIN
Duty = 100%
20
ISB
CS1= VIH or CS2 = VIL
Cycle = MIN
Duty = 100%
ISB1
CS1 ≥ VDD -0.2V
or CS2 ≤ 0.2V
Note: Typical characteristics are at VDD = 5V, TA = 25° C.
MIN.
-0.5
+2.2
-10
-10
TYP.
-
-
-
-
MAX.
+0.8
VDD +0.5
+10
+10
UNIT
V
V
µA
µA
-
-
2.4
-
-
-
-
-
-
-
-
-
-
-
0.4
V
-
V
180
mA
150
mA
120
mA
30
mA
5
mA
-2-