W24257 Datasheet, PDF (2/10 Pages) Winbond – 32K X 8 CMOS STATIC RAM

W24257
TRUTH TABLE
#CS #OE #WE
H
X
X
L
H
H
L
L
H
L
X
L
MODE
Not Selected
Output Disable
Read
Write
I/O1−I/O8
High Z
High Z
Data Out
Data In
VDD CURRENT
ISB, ISB1
IDD
IDD
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +7.0
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°C
Operating Temperature
0 to +70
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C for LL/L; -20 to 85° C for LE)
PARAMETER
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage
Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Power
Supply Current
SYM.
VIL
VIH
ILI
ILO
VOL
VOH
IDD
ISB
ISB1
TEST CONDITIONS
-
-
VIN = VSS to VDD
VI/O = VSS to VDD, #CS = VIH
(min.) or #OE = VIH (min.) or
#WE = VIL (max.)
IOL = +4.0 mA
IOH = -1.0 mA
#CS = VIL (min.),
I/O = 0 mA Cycle = min.,
Duty = 100%
#CS = VIH (min.)
Cycle = min., Duty = 100%
#CS ≥ VDD -0.2V
LL/LE
L
Note: Typical characteristics are at VDD = 5V, TA = 25° C.
MIN.
-0.5
+2.2
-2
-2
TYP. MAX.
-
+0.8
- VDD +0.5
-
+2
-
+2
UNIT
V
V
µA
µA
-
-
2.4
-
-
-
0.4
V
-
V
70
mA
-
-
-
-
-
-
3
mA
15
µA
30
µA
-2-