W9816G6JB Datasheet, PDF (13/42 Pages) Winbond – 512K X 2 BANKS X 16 BITS SDRAM

W9816G6JB
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT NOTES
Voltage on any pin relative to VSS
VIN, VOUT -0.5 ~ VDD + 0.5 ( 4.6V max.) V
1
Voltage on VDD/VDDQ supply relative to VSS VDD, VDDQ
-0.5 ~ 4.6
V
1
Operating Temperature for -5/-6/-7
TOPR
0 ~ 70
°C
1
Operating Temperature for -6I/-7I
TOPR
-40 ~ 85
°C
1
Storage Temperature
TSTG
-55 ~ 150
°C
1
Soldering Temperature (10s)
TSOLDER
260
°C
1
Power Dissipation
PD
1
W
1
Short Circuit Output Current
IOUT
50
mA
1
Note:
Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device
9.2 Recommended DC Operating Conditions
PARAMETER
SYM.
Power Supply Voltage for -5/-6/-6I
VDD
Power Supply Voltage for -7/-7I
VDD
Power Supply Voltage for -5/-6/-6I (for I/O Buffer) VDDQ
Power Supply Voltage for -7/-7I (for I/O Buffer) VDDQ
Input High Voltage
VIH
Input Low Voltage
VIL
Note: VIH (max.) = VDD/VDDQ +1.5V for pulse width ≤ 5 nS
VIL (min.) = VSS/VSSQ -1.5V for pulse width ≤ 5 nS
9.3 Capacitance
(VDD = 3.3V ± 0.3V, TA = 25°C, f = 1MHz)
PARAMETER
MIN.
3.0
2.7
3.0
2.7
2.0
-0.3
TYP.
3.3
3.3
3.3
3.3
-
-
MAX.
3.6
3.6
3.6
3.6
VDD + 0.3
0.8
UNIT
V
V
V
V
V
V
NOTES
2
2
2
2
2
2
SYM. MIN. MAX. UNIT
Input Capacitance (A0 to A10, BA, CS , RAS , CAS , WE , UDQM,
CI
-
4
pf
LDQM, CKE)
Input Capacitance (CLK)
-
4
pf
Input/Output capacitance (DQ0 to DQ15)
CIO
-
5.5
pf
Note: These parameters are periodically sampled and not 100% tested
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Publication Release Date: Jul. 03, 2014
Revision: A01