W9812G6KH Datasheet, PDF (13/42 Pages) Winbond – 2M X 4 BANKS X 16 BITS SDRAM

W9812G6KH
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
Voltage on any pin relative to VSS
Voltage on VDD/VDDQ supply relative to VSS
Operating Temperature for -5/-6/-75
Operating Temperature for -6I
Storage Temperature
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
SYMBOL
RATING
UNIT
VIN, VOUT -0.5 ~ VDD + 0.5 (≤ 4.6V max.) V
VDD, VDDQ
-0.5 ~ 4.6
V
TOPR
0 ~ 70
°C
TOPR
-40 ~ 85
°C
TSTG
-55 ~ 150
°C
TSOLDER
260
°C
PD
1
W
IOUT
50
mA
NOTES
1
1
1
1
1
1
1
1
Note:
1. Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of
the device
9.2 Recommended DC Operating Conditions
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
Power Supply Voltage
VDD
3.0
I/O Buffer Supply Voltage VDDQ
3.0
Input High Voltage
VIH
2.0
Input Low Voltage
VIL
-0.3
Output logic high voltage
VOH
2.4
Output logic low voltage
VOL
-
Input leakage current
II(L)
-5
Output leakage current
IO(L)
-5
3.3
3.6
V
3.3
3.6
V
-
VDD + 0.3
V
-
0.8
V
-
-
V
-
0.4
V
-
5
µA
-
5
µA
Notes:
1. VIH (max.) = VDD/VDDQ+1.5V for pulse width ≤ 5 nS.
2. VIL (min.) = VSS/VSSQ-1.5V for pulse width ≤ 5 nS.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Output disabled, 0V ≤ VOUT ≤ VDDQ.
NOTES
1
2
IOH= -2mA
IOL= 2mA
3
4
- 13 -
Publication Release Date: Apr. 18, 2014
Revision: A02