W49F020 Datasheet, PDF (11/21 Pages) Winbond – 256K X 8 CMOS FLASH MEMORY

Preliminary W49F020
Power-up Timing
PARAMETER
Power-up to Read Operation
Power-up to Write Operation
CAPACITANCE
(VDD = 5.0V, TA = 25° C, f = 1 MHz)
PARAMETER
I/O Pin Capacitance
Input Capacitance
SYMBOL
CI/O
CIN
SYMBOL
TPU. READ
TPU. WRITE
CONDITIONS
VI/O = 0V
VIN = 0V
TYPICAL
100
5
MAX.
12
6
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
Input Pulse Levels
Input Rise/Fall Time
Input/Output Timing Level
Output Load
CONDITIONS
0V to 3.0V
< 5 nS
1.5V/1.5V
1 TTL Gate and CL = 100 pF for 90nS
CL = 30 pF for 70nS
AC Test Load and Waveform
+5V
UNIT
µS
mS
UNIT
pf
pf
D _OUT
30 pF for 70nS
100 pF for 90nS
(Including Jig and
Scope)
1.8K Ω
1.3K Ω
Input
3V
0V
1.5V
Test Point
Output
1.5V
Test Point
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Publication Release Date: October 1999
Revision A1