W49F020 Datasheet, PDF (10/21 Pages) Winbond – 256K X 8 CMOS FLASH MEMORY

Preliminary W49F020
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to Vss Potential
-0.5 to +7.0
V
Operating Temperature
0 to +70
°C
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential except OE
-65 to +150
°C
-0.5 to VDD +1.0
V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential
-1.0 to VDD +1.0
V
Voltage on OE Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
DC Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
Power Supply
Current
ICC _{CE = OE = VIL, WE = VIH,}
all DQs open
- 25
50
mA
Address inputs = VIL/VIH, at f = 5 MHz
Standby VDD
Current (TTL input)
ISB1 _{CE = VIH, all DQs open}
Other inputs = VIL/VIH
-2
3
mA
Standby VDD Current ISB2 _{CE = VDD -0.3V, all DQs open}
(CMOS input)
Other inputs = VDD -0.3V/GND
- 20 100
µA
Input Leakage
Current
ILI VIN = GND to VDD
--
10
µA
Output Leakage
Current
ILO VOUT = GND to VDD
--
10
µA
Input Low Voltage
VIL
-
-0.3 -
0.8
V
Input High Voltage VIH
-
2.0 - VDD +0.5 V
Output Low Voltage VOL IOL = 2.1 mA
--
0.45
V
Output High Voltage VOH IOH = -0.4 mA
2.4 -
-
V
- 10 -