MMBT4401WT1 Datasheet, PDF (6/6 Pages) ON Semiconductor – Switching Transistor NPN Silicon

WILLAS
FM120-M
MMBT4401WT1^THRU
1.0_GA S_eU_nRF_eA_rC_aE_lM_POU_uN_rT_pSC_oH_sO_eTTK_TY_rB_aA_nRR_sIE_isR _tR_oEC_rT_sIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power diss_Sip_Oati_Ton_−o₃ff₂er₃s
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward_.0v₈o₇lt₍a₂g_.e₂₀d₎rop.
• High surge capability.
• Guardring for overvoltage protectio^.0n⁷. ^0(1.80)
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
ter^.m⁰⁵in⁶a⁽l¹s,^.4s⁰ol⁾derable
per
,
MIL-STD-750
Method 20_.02₄6_7(1.20)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0 ^.010( .031(0.8) ⁰Ty^.p². ⁵⁾
.003(0.08)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.004(0.10)MAX.
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
.016(0.40)
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage ^.008(0.20V⁾ RRM
20
30
40
50
60
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge Current 8.3 ms sin_Dgl_ie_mha_elf_nsi_sne_io-w_nav_se _{in IiFnSMches and (millimeters)}
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
RΘJA
SOLDERINGCFJ OOTPRINT*
TJ
0.65^{-55 to +125}
0.65
TSTG
0.025
0.025
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
1.9
0.5
Rated DC Blocking Voltage
@T A=125℃
0.075
10
NOTES:
0.9
1- Measured at 1 MHZ and applied reverse0v.o0l3ta5ge of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.7
0.028
ǒ Ǔ _{SCALE 10:1}
mm
inches
2012-0
WILLAS ELECTRONIC CORP.