MMBT4401WT1 Datasheet, PDF (1/6 Pages) ON Semiconductor – Switching Transistor NPN Silicon

WILLAS
FM120-M+
MMBT4401WT1THRU
1.0^GA S^eUⁿRF^eAC^rE^aM^l O^PU^uNT^rS^pC^oHO^sT^eTK^TY^rB^aARⁿR^sIEⁱR^sR^tE^oC^rT^sIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
We
• Low profile surface mounted application in order to
de_oc_pla_tir_me_it_zh_ea_bt t_oh_ae_rdm_sa_pte_ar_cia_el_. of product compliance with RoHS
requirements.
• Pb-F• rLeoewppaocwkeargleosiss, ahvigahileafbfilceiency.
RoH^•S^Hp^igro^hd^cu^uc^rrt^efo^ntr ^cp^aa^pc^ak^bin^ilg^ityc^,o^lod^we ^fs^ou^rf^wfi^ax^r”^dG^v”^{oltage drop.}
Halo^•g^Heⁱn^ghfr^se^ue^rgp^ero^cd^au^pc^at^bfⁱo^lir^typ^.acking code suffix “H”
• Guardring for overvoltage protection.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• Ultra high-speed switching.
ORDE_•R_SIN_iliG_coI_nN_eF_pO_itaR_xM_iaA_{l p}T_lI_aO_nN_{ar chip, metal silicon junction.}
0.071(1.8)
0.056(1.4)
3
De^•v^Lic^ee^{ad-free part}M^{s m}ar^ek^ein^tg^environmentaS^lh^sip^tapⁿin^dg^{ards of}
MIL-STD-19500 /228
MMB^• T^R4^o4^H0^S1W^prT^od1^{uct for p}2^aX^{cking code} 3^s0^u0^ff0^ix/T^"a^Gp^"e & Reel
Halogen free product for packing code suffix "H"
1
2
MAXIMMUeMcRhAaTnINiGcSal data
• Ep_Ro_ax_tiy_n:_gUL94-V0 rated fla_Sm_ye_mr_be_ota_l rdant _Value
Unit
• Case : Molded plastic, SOD-123H
Collector–Emitter Voltage
V CEO
40
Vdc_,
• Terminals :Plated terminals, solderable per MIL-STD-750
Collector–Base Voltage
Method 2026
V CBO
60
Vdc
0.031(0.8) Typ.
SOT-323
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Em_•itt_Per_o–_lB_ara_is_tye _:V_Io_nlt_da_ig_ce_{ated by catho}V_dE_eBO_band
6.0
Col•leMctooruCnutirnregnPt —osiCtioonntin: Auonuys I C
600
Vdc
mAdc
Dimensions in inches and (mill3imeters)
COLLECTOR
• Weight : Approximated 0.011 gram
1
THERMAL CH_MA_AR_XA_IC_MT_UE_MRIS_RT_AIC_TS_{INGS AND ELECTRICAL CHARACTERISTICS}
BASE
Ratings at 25℃^Chaa^rm^acb^tie^en^rit^st^te^icmperature unless otherwise ^Ssp^ye^mc^bif^oie^ld.
Max
Unit
Singl^Te^otp^ah^la^Ds^ee^vh^ica^elf^Dw^isa^sv^ipe^a, ^t6^io0ⁿH^Fz,^Rr^–es⁵is^Bti^ov^ae^rdo^,f ⁽in¹d⁾ uctive load. ^PD
225
mW
2
EMITTER
For c^Ta^Ap⁼ac²i⁵tiv^°Ce load, derate current by 20%
Derate above 25°C
RATINGS
Thermal Resistance, Junction to Ambient
Markin_Tog_tC_alo_Dd_ee_{vice Dissipation}
Maximum Recurrent Peak Reverse Voltage
Alumina Substrate, (2) TA = 25°C
Maxim_Du_em_raR_teM_aS_boV_vo_elta₂g₅e_°C
Maxim_Tu_hm_erD_mC_alB_Rlo_ec_sk_isin_tag_nV_co_el_,ta_Jg_ue_{nction to Ambient}
1.8
mW/°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
RθJA
556
°C/W
FM180-MH
FM1100-MH
FM1150-MH FM1200-M
VRRM ^PD
12
20
1₃3₀₀
14 _mW 15
30
40
50
16
60
18
10
115 120
80
100
150
200
VRMS
14
2₂1_.4
28_mW/°C35
42
VDC _RθJA 20
3₄0₁₇
40 _°C/W 50
60
56
70
105
140
80
100
150
200
MaximJumncAtiovenragned FSotorwraagrde RTeemctpifieerdatCuurerrent
IOT_J , T_stg
–55 to +150
°C
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
suDpEerVimIpCoEseMd oAnRraKteIdNloGad (JEDEC method)
Typic_Mal_MT_Bhe_Tr₄m₄a₀l₁R_Le_Ts₁is₌ta₂n_Xce (Note 2)
Typical Junction Capacitance (Note 1)
RΘJA
CJ
O^Epe^Lr^Eat^Cin^Tg^RTe^ICm^Ape^Lra^Ctu^Hre^AR^Ra^Ang^Ce^{TERISTICS (T}A ^{= 25°C u}T^nlJ^{ess otherwise n-5o5tetdo.)+125}
Storage Temperatur_Ce_hR_aa_rn_ag_ce_teristic
TSTG_Symbol
Min
30
40
120
Max ^{- 65 to +1}U⁷n⁵it
-55 to +150
OFF CHARACTCEHRAIRSATCICTESRISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maxim_Cu_om_lleF_co_torw_r–a_Erd_mV_itto_elt_ra_Bge_rea_at_k1_d._o0_wA_nD_VC_{oltage (3)}
Maxim_(Iu_Cm₌ A₁v_.0er_mag_Ae_dR_c,e_Ive_B r₌se₀₎Current at @T A=25℃
Rated_CD_olC_leB_ctl_ooc_r–k_Bin_ag_sV_eo_Blt_ra_eg_ae_{kdown Voltag}@_e T A=125℃
VF _{V (BR)CEO}
IR
V (BR)CBO
0.50
40
0.70
Vdc ^0.85
—
0.5
10 _Vdc
0.9
0.92
NOTE⁽S^I:^{C = 0.1 mAdc, I E = 0)}
60
1- Mea^Es^murⁱe^ttd^era^–t ^B1^aM^sH^eZ^Ba^rn^ed^aka^dp^opl^wieⁿd ^Vre^ov^le^tars^ge^evoltage of 4.0 VDC. ^{V (BR)EBO}
2- The⁽r^Im^Ea⁼l R⁰e^.1sis^mta^An^dc^ce^,F^Iro^Cm⁼ J⁰u⁾nction to Ambient
6.0
Base Cutoff Current
I BEV
—
Vdc
—
µAdc
(V CE = 35 Vdc, V EB = 0.4 Vdc)
—
0.1
Collector Cutoff Current
I CEX
µAdc
(V CE = 35 Vdc, V EB = 0.4 Vdc)
—
0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.₂P₀u₁lse₂T_-e₀s₆t: Pulse Width <300 µs; Duty Cycle <2.0%.
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.