MMBT555XLT1 Datasheet, PDF (5/5 Pages) WILLAS ELECTRONIC CORP – High Voltage Transistors

WILLAS
FM120-M+
MMBT555xL^TT^H1^RU
1.0A S^HURⁱF^gAC^hE M^VO^oUN^ltT^aS^gCH^eOT^TTK^rY^aBⁿAR^sRⁱIE^sR^tR^oE^rC^sTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
SOT-23
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage.1d2ro2p(3. .10)
• High surge capability.
• Guardring for overvoltage protection.
.106(2.70)
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated termina_.0ls₈, ₀so₍₂ld_.e₀r₄ab₎ le per MIL-STD-750
Method 2026 _.070(1.78)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.008(0.20)
0.031(0.8) Typ.
.003(0.08)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambien_.t₀t₀em₄₍p₀er_.a₁t₀ur₎e_Mu_Anle_Xs_.s otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
12
13
14
15
16
._V0_R2_R0_M(0.50₂)₀
30
40
50
60
._V0_R1_M2_S(0.30₁)₄
21
28
35
42
18
10
115 120
80
100
150
200 Volts
56
70
105
140 ^Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
1.0
Dimensions in inches and (millimeters)
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
30
superimposed on rated load (JEDEC method)
Amps
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
RΘJA
40
℃/W
CJ
120
PF
TJ
-55 to +125
-55 to +150
℃
TSTG
0.037
- 65 to +175
℃
0.037
0.95
0.95
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
NOTES:
0.5
0.079
10
2.0
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 V₀D_.0C₃.₅
2- Thermal Resistance From Junction to Ambient
0.9
0.031
0.8
inches
mm
201²2⁰-¹1²1^-06
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