MMBT555XLT1 Datasheet, PDF (1/5 Pages) WILLAS ELECTRONIC CORP – High Voltage Transistors

WILLAS
FM120-M+
MMBT555xLTTH1RU
1.0A S^HUR^igFA^hCE ^VMO^oU^lN^tT^aS^gCH^eOT^TTK^rY^aBⁿAR^sRⁱI^sER^toRE^rC^sTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
op_Dti_Em_Viz_ICe_Ebo_Ma_Ard_Rs_Kpa_INc_Ge. _{AND ORDERING INFORMATION}
• Low power loss, high efficiency.
•
High
Device
current capability,
Marking
low forward
voltage
Shipping
drop.
• Hig_Mh_Msu_Br_Tg₅e₅₅c₀a_Lp_Ta₁bility.
M1F
3000/Tape&Reel
• Guardring for overvoltage protection.
• Ultra high-speed switching.
•
MMBT5551LT1
Silicon epitaxial planar
G1
chip, metal
3000/Tape&Reel
silicon junction.
• L_Mea_Ad_X-f_Ir_Mee_Up_Mar_Rts_Am_TIe_Ne_Gt e_Snvironmental standards of
MIL-STD-19500 /228
• RoHS product for paRckaitninggcode suffix "G"
Symbol
Value
Halogen free product for packing code suffix "H"
Collectorā-āEmitter Voltage
Mechanical data
V_CEO
MMBT5550
140
•
Epoxy
:
UL94-V0
rated
flame
MMBT5551
retardant
160
Package outline
SOD-123H
FEATURE
0.146(3.7)
ƽ We declare th0a.1t3t0h(3e.3m) aterial of product
compliance with RoHS requireme^0.n⁰¹t²s⁽.^{0.3) Typ.}
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing co⁰d^.0e⁷¹s⁽¹u^.f⁸f⁾ix “H”
0.056(1.4)
Unit
Vdc
0.040(1.0)
0.024(0.6)
• CaCsoell:eMctoorldā-eāBdaspelaVsotilcta,gSeOD-123H
V_CBO
MMBT5550
16, 0
• Terminals :Plated terminals, so_Mld_Me_Bra_Tb₅₅le₅₁per MIL-STD-75₁0₈₀
Method 2026
Emitterā-āBase Voltage
• Polarity : Indicated by cathode band
V_EBO
6.0
Collector Current - Continuous
• Mounting Position : Any
I_C
600
Vdc
0.031(0.8) Typ.
0.031(0.8) Typ.
SOT–23
Vdc
mAdc
Dimensions in inches and (millimeters)₃
COLLECTOR
•^TW^He^Eig^Rh^Mt ^A: A^Lp^Cpr^Ho^Axi^Rm^Aa^Cte^Td^E0^R.0^I1^S1^Tg^ICra^Sm
Cha_Mra_Act_Xer_Ii_Msti_Uc _{M RATINGS AND ELECTRIC}S_Aym_Lb_Col_HARACTM_Eax_RISTICSUnit
Ratings
at
Total Device Dissipation FR– 5 Board, (1)
25_T℃_{A = 2}a₅m_°b_Cient temperature unless otherwise
specified.
PD
225
mW
Single phase_Dh_era_alf_tew_aa_bv_oe_v, _e60₂H_5°z_C, resistive of inductive load.
1.8
mW/°C
For capacitiv_Te_helo_ra_md_a,_ld_Re_era_sit_se_tac_nu_crr_ee_,n_Jt_ub_ny_ct2_io0_n%_{to Ambient}
RθJA
556
°C/W
1
BASE
2
EMITTER
Total DevicReADTiIsNsGipSation
Marking CodeAlumina Substrate, (2) TA = 25°C
SYMBOL
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
PD
300
mW
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH
UNIT
12
13
14
15
16
18
10
115 120
Maximum RecDuerrreantet PaebaokveRe2v5e°rCse Voltage
VRRM
20
30
2.440
5m0W/°C 60
80
100
150
200 Volts
Maximum RMTShVeormltaagleResistance, Junction to AmbientVRMS
14RθJA 21
41278
35°C/W 42
56
70
105
140 ^Volts
Maximum DC^JB^ulⁿo^cc^tkⁱi^onⁿg ^aVⁿo^dlta^Sg^te^{orage Temperature}
VDC
T₂₀J , Tstg ₃₀ –55 to₄+₀150 ₅₀ °C ₆₀
80
100
150
200 ^Volts
Maximum_EA_Lv_Eer_Cag_Te_RF_Io_Cr_Awa_Lrd_CR_He_Act_Rifie_Ad_CC_Tu_Err_Ren_It_{STICS (TA =}I₂O_{5°C unless otherwise noted.)}
1.0
Amps
Peak Forward Surge Current 8_C.3_ham_rs_acsi_tn_eg_rle_ish_tia_clf sine-wave
superimposed on rated load (JEDEC method)
Typical Th^Oe^Frm^Fa^Cl R^He^Asis^Rta^An^Cce^T(^EN^Rot^Ie^S2^T)^ICS
IFSM
RΘJA
Symbol
Min
Max 30 Unit
40
Amps
℃/W
Typical JunctiCoonllCeacptoarc–itEamncitete(rNBotreea1k)down Voltage(3) CJ
V (BR)CEO
120 _Vdc
PF
Operating Tem_(I p_Ce₌ra₁t_.u₀re_mR_Aa_dn_cg_,e_{I B = 0)}
MMB^TT^J 5550
-55 to +125
140
—
-55 to +150
℃
Storage Temperature Range
MM^TB^STT^G5551
160
—^{- 65 to +175}
℃
Collector–Base Breakdown Voltage
V (BR)CBO
Vdc
(I C = 1^C00^HAµA^Rd^Ac^C,^TI^EE^R=^IS0^T) ^ICS
Maximum Forward Voltage at 1.0A DC
M^SM^YB^MT^B5^O5^L50^{FM120-MH FM130-MH FM140-MH}16^F0^{M150-MH F}—^{M160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
MMB^VT^F 5551
0.50
180 ^0.70—
0.85
0.9
0.92 Volts
Maximum Ave_Er_mag_ite_teR_r–e_Bve_ar_ss_ee _BC_ru_er_are_kn_dt_oa_wt _n @_VoT_ltA_a=_g2_e5℃
IR
Rated DC Blo₍c_Ik_Ein₌g₁V₀o_µlt_Aag_de_{c, I C = 0)} @T A=125℃
V (BR)EBO
0.5 _Vdc
6.0
— ¹⁰
mAmp
NOTES:
Collector Cutoff Current
1- Measured at⁽ 1^VM^CH^B Z⁼ a¹n⁰d⁰a^Vp^dp^cli^,ed^I r^Ee⁼ve⁰rs⁾e voltage of 4.0 V^MD^MC.^BT5550
2- Thermal Res⁽is^Vta^Cn^Bce⁼ F¹r²o⁰m^VJ^du^cn^,ct^Iio^En⁼to⁰A⁾ mbient
MMBT5551
( V CB = 100Vdc, I E = 0, T A=100 °C) MMBT5550
I CBO
—
100
nAdc
—
50
—
100
µAdc
( V CB = 120Vdc, I E = 0, T A=100 °C) MMBT5551
—
50
Emitter Cutoff Current
( V BE = 4.0Vdc, I C= 0)
I EBO
—
50
nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
201²2⁰-1¹1^2-06
WIL^WLA^ILS^LE^AL^SE^EC^LT^ER^CO^TRN^OIC^NIC^CO^CR^OP^R.^P.