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UFM101-M Datasheet, PDF (3/4 Pages) WILLAS ELECTRONIC CORP – 1.0A SUFRACE MOUNT EFFICIENT FAST RECTIFIERS-50-600V
WILLAS
1.0A1S.0UAFSRUARFCAECME OMOUUNNTTESFCFHICOTIETNKTY
FAST RECTIFIERS-50-600V
BARRIER RECTIFIERS -20V- 200V
SOSDO-1D2-132-3L+PAPCACKKAAGGEE
UFMF1M0T11H-2MR0U-M+
UFTMFHP1MbR0FU15re2-eM0P0ro-dMuc+t
Pin•nFBienatacghtuipnrroefcoessrsmdeasitgino, enxcellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profPileinsurface mounted application in oSrdiemr toplified outline
optimize board space.
SOD-123H
Symbol
• Low power loss, high efficiency.
•PHiingh1currcenattchapoadbielity, low forward voltage drop.
•PHiingh2surgaencaopdabeility.
1
• Guardring for overvoltage protection.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
2
1
2
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
OrderHianloggeannfrdeeMproadrucktifnorgpaicnkfinogrcmodaetsiuoffnix "H"
Mechanical data
• ETpyopxye: UnLu94m-Vb0erarted flame reMtaradarnkting code
0.040(1.0)
0.024(0.6)
• CUasFe M: M1ol0de1d-pMla-sTticH, SOD-123H
E1
•
TUe r mFiMn a1l s 0: P2l a-tMe d-tTe rHm i n a l s ,
solderable
,
peEr M2IL-STD-750
UFM10M3e-thMod-T20H26
E3
• PUolFarMity 1: I0nd4ic-aMte-dTbHy cathode band
E4
• MUouFnMtin1g P0o5s-itMion-T: AHny
E5
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
N•oWtee:ig-hMt : :ApPparocxkimaagteed c0.o01d1eg,raSmOD-123-L
-TM:ATXaIMpUinMg RRAeTeINl GS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃Pba-mFbrieeentpteamcpkeargateuriesuanvleasislaobthleerwise specified.
Single phase hRalof HwaSvep,r6o0dHuzc,trefosrisptivaeckofiningduccotdivee slouafdfi.x ”G”
For capacitive Hloaadlo, gdeernatfereceurprernotdbuyc2t0f%or packing code suffix “H”
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
MaSrkuinggCgodeested solder pad layout
12
13
14
15
16
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200 Vo
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRMS
14
21
28
35
42
C
VDC
20
30
40
50
60
56
70
105
140 Vo
80
100
150
200 Vo
Maximum Average Forward Rectified Current
IO
1.0
Am
Peak Forward Surge Current 8.3 ms single half sineA-wave
superimposed on rated load (JEDEC method)
IFSM
30
Am
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/
Typical Junction Capacitance (Note 1)
CJ B
120
P
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.50
0.70
0.85
0.9
0.92 Vo
Maximum Average Reverse Current at @T A=25℃DimensioIRns in inches and (millimeters)
0.5
mA
Rated DC Blocking Voltage
@T A=125℃
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
PACKAGE
A
SOD-123-L 0.075 (1.90)
B
0.055 (1.40)
C
0.075 (1.90)
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.