UFM101-M Datasheet, PDF (2/4 Pages) WILLAS ELECTRONIC CORP – 1.0A SUFRACE MOUNT EFFICIENT FAST RECTIFIERS-50-600V

WILLAS
1.0A_1.S_0AU_SF_UR_RA_FC_AE_CEM_MO_OU_UN_NT_T E_SF_CF_HI_OC_TIE_TKN_YT_BF_AA_RS_RT_IER_RE_RC_ET_CI_TF_II_FE_IER_RS_S-5_-20₀-_V6_-0₂0₀V_0V
SO_SD_O-_D1_-2₁3₂-₃L₊PA_PAC_CK_KA_AG_GE_E
UFM^F1^M0_T1¹_H-²M_R⁰_U^-M+
UF^TM^F_P^H1^M_b^R0_F^1U_r5_e²_e-⁰M_P⁰_ro^-_d^M_uc⁺_t
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
Rating and characteristic curves
SOD-123H
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
•
FIG.1-TYPICAL FORWARD
Guardring for overvoltage protection.
• Ultra high-speCeHdAsRwAitCcThEinRgI.STICS
• Silicon epitaxial planar chip, metal silicon junction.
•₁L₀ead-free parts meet environmental standards of
MIL_U-_FS_MT₁₀D_1--_M1_-9_U5_F0_M0₁₀₃/2_-M28
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
0.071(1.8)
0.056(1.4)
1.2
1.0
0.8
Mechanical data
1
• Epo^UFx^My¹:⁰⁴U^-ML94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
terminals,
TJ=25°C
solderable per
,
MIL-STD-750
Method 2026
0.6
0.4
0.031₀(0_.2.8) Typ.
P.C.B. Mounted on
0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Areas
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0
0
25 50 75 100 125 150 175
•0P.1olarity : Indicated by cathode band
Dimens^Lio^En^As^Din^TEin^Mch^Pe^Es^Ra^An^Td^UR(m^Eil⁽li^°m^Ce⁾ ters)
• Mounting Position : Any UFM105-M
• Weight : Approximated 0.011 gram
pulse width =300μs
0.01 MAXIMUM RA¹T^%IN^duG^tyS^cyA^clN^e D ELECTRICAL CHARACT^FIE^GR^.4I^-S^MT^AXIC^IMS^{UM NON-REPETITIVE FORWARD}
SURGE CURRENT
Ratings a⁰t^.2⁴5℃^0.6am⁰b^.i⁸ent ¹te^.0mpe¹ra^.2ture^1.u⁴nle¹s^.s⁶oth¹e^.8rwis²e^.0specified. ⁵⁰
Single phase half w^Fa^Ov^Re^W, 6^A0^RH^Dz^V,^Or^Le^Ts^Ais^Gt^Eiv^,(e^V)of inductive load.
For capacitive load, derate current by 20%
40
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
30
Marking Code
12
13
14
15
16
18
8.3ms₁S₀ingle Half ₁₁₅
120
Maximum RecurreRnEt PCeOaVk ERRevYeTrsIeMVEoCltaHgAeRACTERISTVICRSRM
20
30
40
50
60^{TJ=25 C}
80
Sine ₁W₀av₀e
150
200 Volt
Maximum^5N0R_O^W _NM_INS_DUV_CTo_IVlt_Eage
10W
NONINDUCTIVE
20
VRMS
14
21
28
35
42
56
JEDEC₇₀method
105
140 ^Volt
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
10
80
100
150
200 ^Volt
Maximum Average Forward Rectified Current
IO
(+)
()
1.0
Am
Peak
Forwa^2(ar⁵d_pVpdS_rocxu_.)rge
D.U.T.
Current
8.3
ms
single
half
sine-waveGE(NPNOUE_ITLRFESAS^ET2_MO) R
0
1
superimpos⁽ed⁾ on rated load (JEDEC method)
(+)
1W
Typical Thermal Resist^Na^On^Nc^- e (Note 2)^{OSC(NILOLTISEC1O)PE}
RΘJA
INDUCTIVE
Typical Junction Capacitance (Note 1)
CJ
5
10 ³⁰
50
100
NUMBER OF CYCLES AT 60Hz
40
120
Am
℃/W
PF
Operating_NOT_Te_Em_S: p_1.e_Rr_ia_setu_Tir_me_e=R₇a_nsn_mg_ae_{x., Input Impedance= 1 megohm.22pF.} TJ
-55 to +125
-55 to +150
℃
Storage Tempe2r.aRtiuserTeimRe=a1n0gnsemax., Source Impedance= 50 ohms. TSTG
- 65 to +175
FIG.5-TYPICAL JUNCTION CAPACITANCE
℃
CHARACTERISTICS
SYMBOL FM120-MH FM³1⁵30-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum Forward Voltage at 1.0trAr DC
VF
Maximum Average₊₀R_.5e_Averse Current at_| @T A=25℃
Rated DC Blocking Voltage
|
|
@T A=125℃
IR
|
|
NOTES:
0
|
|
1- Measured at 1 MHZ and applied revers^|e voltage of 4.0 VDC.
-0.25A
0.50
30
25
20
0.70
0.5
10
0.85 ^{TJ=25 C}
0.9
f=1.0MHZ
Vsig = 50mVp-p
0.92 Volt
mAm
2- Thermal Resistance From Junction to Ambient
15
10
-1.0A
2012-06
1cm
SET TIME BASE FOR
10 / 20ns / cm
5
0
.01
.05 .1
.5 1
5 10
50 100
REVERSE VOLTAGE,(V)
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.