SESD5Z5CL Datasheet, PDF (3/3 Pages) WILLAS ELECTRONIC CORP – Transient Voltage Suppressors for ESD Protection

WILLAS
FM120-M+
SESD5Z5C_TL_HRU
T₁r_.a_0Ans_Si_Ue_Rn_Ft_AV_Co_Elt_Ma_Og_Ue_NS_Tu_Sp_Cp_Hr_Oe_Ts_Ts_Ko_Yrs_BAfo_Rr_RIE_ES_RD_REP_Cr_To_It_Fe_IEc_Rti_So_-n_{20V- 200V}
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
App^Fli^ec^aat^ti^uo^rn^eN^s ote
• Batch process design, excellent power dissipation offers
Package outline
E^ble^ec^ttt^er^ro^rs^et^va^eti^rc^sed^leis^ac^kh^aa^gr^eg^ce^ur(^rE^enS^t D^an)^di^ts^hea^rmm^ala^rj^eo^sr^isc^taaⁿu^cs^ee^. of failure in electronic syste^Sm^Os^D.^-1T²r³a^Hnsient Voltage
• Low profile surface mounted application in order to
Supproepstsimoirzse (bToVarSd)spaarece.an ideal choice for ESD protection. They are capable of clamping the incoming
trans^•ie^Ln^owt t^po^oa^welo^r w^lose^sn^{, h}oⁱu^gg^hh^efl^fe^icv^ieeⁿl ^cs^yu^. ch
that
damage
to
the
protected
semiconductor
is
prevented. 0.146(3.7)
0.130(3.3)
• High current capability, low forward voltage drop.
0.012(0.3) Typ.
•^SH^ui^rg^fah^cs^eurg^me ^oca^upⁿa^tbi^Tli^Vty^S. ^{offers the best choice for minimal lead inductance. They serve as parallel}
prote^•c^Gti^uo^an^rde^rilⁿe^gm^foe^rn^ot^vs^e, ^rvc^oo^ln^tan^ge^ec^pt^re^od^tecb^te^iotⁿw^.een the signal lines to ground. As the transient rises above the
oper^••a_SUtin_illtig^rcaov^hno^igelt^hpa^-itg^sape_xeiao^eldf_pt^slh_awe_nitacd_rhe_cinhv^gii_pc^. _,e_m,
the
etal
TVS becomes
silicon junction.
a
low
impedance
path
diverting
the
transient
0.071(1.8)
cur⁰r^.0e⁵⁶n⁽¹t^.4t⁾ o
grou•nLde. aTdh-fereSeEpSarDts5mZe5eCt Lenivsirtohnemiednetaall sbtoanadrdaredsveolf protection of ESD sensitive semiconductor components.
•^TR^Mho^eIH^L-S^tSinp^Tyr^Dod^-S1u^Oc⁹t^5Df⁰o^-0r⁵p^/22a³c²k⁸i^png^acco^kd^ae^gs^euf^afix^llo"G^w"^{s design flexibility in the design of high density boards where the}
spaceHsalaovgeinngfreise partodaucpt rfoermpaiucmkin.gTcohdise seunffaixb"lHe"s to shorten the routing and contributes to hardening against
ESD^M. ^{echanical data}
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
SOD^{• C}-5^as2^e3^{: M}M^oe^ldc^edh^pa^lan^si^tc^ica^{, S}l^OD^Da^-1t²a^3H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
.051(1.30) _{• Mounting Position : Any}
Dimensions in inches and (millimeters)
.043(1.10) ^{• Weight : Approximated 0.011 gram}
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200 V
.028(0.70) _VRMS
14
21
28
35
42
56
70
105
140 ^V
VDC
20
30
40
50
60 _.0208₍0_0.501₎00
150
200 ^V
IO
1.0
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
A
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.067(1.70) Storage Temperature Range
TSTG
-55 to +125
120
- 65 to +175
-55 to +150
.059(1.50) _{CHARACTERISTICS}
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 V
Maximum
Rated DC
Average
Blocking
Reverse
Voltage
Current
at @T A=25℃
Di_@m_Te_A=n₁₂s₅i_℃ons
in^IR
inches
and
(millimeters)
0.5
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Marking ^{2- Thermal Resistance From Junction to Ambient}
Type number
Marking code
SESD5Z5CL
5CL
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.