SESD5Z5CL Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – Transient Voltage Suppressors for ESD Protection

WILLAS
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SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Elect^•r^Lic^owal^prP^ofa^ilr^ea^sum^rfae^ct^ee^mr ^{ounted application in order to}
optimize board space.
• Low power loss, high efficiency.
Sym^• b^Ho^igl^{h current capability}P^{, l}a^or^wa^fm^ore^wt^ae^rr^{d voltage drop.}
• High
I_P•_PGuar
• Ultra
su_Mrg_ae_xc_imap_ua_mbility._Reverse
dr_Cin_ug_rf_ro_er_no_tvervoltage protec
high-speed switching.
ti
Peak
on.
Pulse
V•_CSiliconCelpaitmaxpiianl gplVanoaltracgheip,@meI_Pta_Pl silicon junction.
V_R^•_W^LM_M^eIaLd-S-fTrW^eDeo_-1pr₉k^a5i^rn^t0sg_0m/P_2ee_2ea_8t k^enR^vie^rovⁿe^mrs^ee^ntV^alo^slt^ta^ang^de^{ards of}
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Current
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• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Elect^•r^Mic^oa^unl ^tC^ingh^Pa^or^sa^itc^iotⁿe^:r^Aiⁿs^ytics Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA
• Weight : Approximated 0.011 gr_Va_Bm_R
V_F
Part
Num_Mb_Aer_Xs_IMUM
R^MAⁱTⁿI^.NGS^TA^yN^p.D
EL^ME^aC^xT^. RICA^ITL
V_RWM
I_R
CHARACTERISTICS
Max.
I_F
Typ.
C
Typ. 0v bias
Ratings at 25℃ ambient tempera_Vture unless_Votherwise_Vspecified_m. _A
V
µA
V
mA
pF
Singl_Se _Eph_Sa_Dse₅h_Za₅lf_Cw_Lave, 60Hz, re₅s_.is₈tive of in₆d_.u₇ctive lo₇ad_.8.
1
5.0
1
1.25 200
6
For capacitive load, derate current by 20%
*Surge current waveform per Figure 1.
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
M¹a^. rkin^Vg^BC^Roⁱd^se^{measured with a pulse test current IT at a}1ⁿ2^ambie1ⁿ3^{t temp}1^e4^rature1^o5^{f 25℃}1^．6
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 V
M_Ta_yx_pim_iu_cm_aR_lM_CS V_ho_alta_rg_ae_cteristics
Maximum DC Blocking Voltage
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
56
70
105
140 ^V
80
100
150
200 ^V
Maximum Average Forward Rectified Current
IO
1.0
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
A
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
IR
0.5
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Fig1. Pulse Waveform
2- Thermal Resistance From Junction to Ambient
Fig2.Power Derating Curve
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.