SCS521G Datasheet, PDF (3/3 Pages) WILLAS ELECTRONIC CORP – 100mA Surface Mount Schottky Barrier Rectifiers-30V

WILLAS
100mA_1.0S_Au_Sr_Ufa_Rc_Fe_ACM_Eo_Mu_Ont_US_NTch_So_Ct_Htk_Oy_TTB_Ka_Yrr_Bie_Ar_RR_RIe_Ec_Rti_Rfi_Ee_Crs_T-_IF3_I0_EV_{RS -20V- 200V}
SOD-723 _SP_Oa_Dc_-k₁a₂g₃₊e _PACKAGE
FM120-M+
THRU
SCS5_F2_M1G_1200-M
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
•
High
current
0.3
capability,
low
forward
voltage
drop.
• High surge capability.
0A
Io
0V
VR
• Guardring for overvoltage protection.
0.2
• Ultra high-speed switchDiCng.
t
T
D=t/T
VR=15V
Tj=125℃
• Silicon epitaxial planar chip, metal silicon junction.
D=1/2
• Lead-free parts meet environmental standards of
MIL-STD-19500 /22^0.18
0.3
0.2 _DC
D=1/2
0.1
0.146(3.7)
0.130(3.3)
0A
Io
0V
t
VR
D=t/T
VR=15V
T _Tj=125℃
• RoHS product for packing code suffix "G"
Sin(θ＝180)
Halogen free product for packing code suffix "H"
Sin(θ＝180)
Mechanical da⁰ ₀ta _{25 50 75 100 125}
0
0
•
Epoxy
:
UL94-V0
rated
AMBIENT TEMPERATURE:Ta(℃)
flame_Der_re_att_ia_ngrd_Cua_rvn_et_{ﾞ(Io-Ta)}
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
25 50 75 100 125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
SOD−723
Dimensions in inches and (millimeters)
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.043(1.10) Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half w_.0av₃e₅, 6₍0₀H_.z₉, ₀re₎sistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50 _.026₆0_(0.65)80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
.017(0.45)
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.059(1.50) ^TSTG
-55 to +125
40
120
- 65 to +175
-55 to +150
.051(1.30) ^{CHARACTERISTICS}
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@T A=25℃
@T A=125℃
SOL^IRDERING
FOOTPRINT*
0.5
10
NOTES:
1.1
1- Measured at 1 MHZ and applied reverse voltage of 4.⁰0^.0V⁴D³C.
2- Thermal Resistance From Junction to Ambient
0.45
0.0177
0.50
0.0197
ǒ Ǔ _{SCALE 10:1}
mm
inches
2012-06
2012-11
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.