English
Language : 

SCS521G Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – 100mA Surface Mount Schottky Barrier Rectifiers-30V
WILLAS
100m1A.0SAuSrUfaRcFeACMEoMuOnUt NSTchSoCHttOkyTTBKaYrBriAeRr RRIeEcRtiRfiEeCrTsI-F3I0EVRS -20V- 200V
SOD-723SPOaDc-k1a23g+e PACKAGE
FM120-M+
THRU
SCS5F2M1G1200-M+
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
z•ALopoppwtilmipcioazwetieobronlaorsds,shpiagchee. fficiency.
Re• cHtiifgyhincgursremnat cllappoawbielitry, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
zF• eSailitcuorneespitaxial planar chip, metal silicon junction.
1)•ULeltraad-sfrmeeapllamrtos lmdetyept een.vironmental standards of
MIL-STD-19500 /228
2) • LRoowHSVpFroduct for packing code suffix "G"
3) HHiaglohgerenlifarebeilpitryoduct for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOD - 723
0.040(1.0)
0.024(0.6)
zC• Coanssetr: uMcotlidoend plastic, SOD-123H
,
Si•licToenrmeinpaitlasx:Pialal pteladnteerrminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
1
CATHODE
2
0.031(0.8) Typ.
ANODE
z•WPeoladreitcyl:aIrneditchaatet dthbey mcaathteodriealboanf dproduct
•cMomoupnltiianngcPeoswitiitohnR: AonHyS requirements.
Dimensions in inches and (millimeters)
•PWb-eFigrhete: pAapcprkoaxgimeaitsedav0a.0il1a1bgleram
RoHS product for packing code suffix ”G”
HalogeMn fAreXeIMprUoMducRtAfoTrINpaGckSinAgNcDodEeLsEuCffiTx R“HIC” AL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
zAbsolute maxiRmAuTmINGraStings (Ta=25°C)
Marking Code
Parameter
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Symbo1l2
13 Lim1it4s
15
1U6nit 18
10
115 120
MaximRumevReerscuerrveontltPaegaek (RDeCve)rse Voltage
VRRM VR 20
30 3040
50
60V
80
100
150
200
MaximAuvmeRraMgSeVroeltcatgifeied forward current
VRMS Io 14
21 10208
35
4m2 A
56
70
105
140
MaximFuomrwDCarBdloccukirnrgenVtolstaugrege peak (60Hz・1cyc) VDC IFSM 20
30 50400
50
6m0 A
80
100
150
200
Junction temperature
Tj
125
℃
MaximSutmorAavgeeragteemFoprewraardtuRreectified Current
IO Tstg
-40 to +125
℃1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superizmEpolesecdtroicnaral tcehd aloraadc(tJeErDisEtCicmse(Tthao=d2) 5°C)
Typical ThermalPRaersaismtanecteer(Note 2) Symbol
TypicaFl oJurnwcatirodn Cvoapltaacgiteance (Note 1)
VF
OperaRtinegvTeermsepecruatrurreenRt ange
IR
Storage Temperature Range
IFSM
MRΘinJA.
C-J
T-J
TSTG
Typ. Max.
-
0.35
- -551to0+125
Unit
V
µA
30
Co4n0ditions
IF=10mA120
VR=10V
- 65 to +175
-55 to +150
CHARACTERISTICS
MaximzumDOeFvoricwearMd aVrok ltiangge at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC BloDckeivnigceVoltage
Marking@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
SCS521G
F
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.