PXT2222A Datasheet, PDF (3/3 Pages) NXP Semiconductors – NPN switching transistor

WILLAS
FM120-M
PXT2222A ^THRU
SOT-₁8_.09_{A S}P_Ul_Ra_Fs_ACti_Ec_M-_OE_Un_Nc_T a_SCp_Hs_Ou_TTl_Ka_Yte_BAT_Rr_Ra_IEn_R s_REis_CTto_IFIr_Es_{RS -20V- 200V}
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
O u t l i n e D r a w i n g better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for pac^.k¹in⁸g¹co⁽⁴de^.6su⁰f⁾fix "H"
Mechanical data _.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals,_.s₀o₆ld₁e_Rra_Ebl_Fe per MIL-STD-750
Method 2026 _(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
S O T- 8 9 ^SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
.063(1.60)
.055(1.40)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
RATINGS
.154_M(_a3_rk._in9_g1_C)_ode
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.102(2.60)
SYMBOL FM120-MH FM130-M_.H₀F₉M₁1₍4₂0-M_.3H₀FM₎ 150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
12
13
14
15
16
18
10
115 120
.02_VR3_R(_M0.58)₂₀
30
40
50
60
80
100
150
200
.01_VR6_M(_S0.40)₁₄
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
superi^.m⁰p³os¹ed⁽⁰on^.8ra⁾ted load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range _.060TYP
Storage Temperature Range _(1.50)TYP
IO
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
.197(0.52)
.013(0.32)
1.0
30
40
120
-55 to +150
- 65 to +175
.017(0.44)
CHARACTERISTICS ^.118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-M^.0H¹FM⁴1⁽8⁰0-^.M³H⁵F⁾M1100-MH FM1150-MH FM1200-M
Maximum Forward Voltage at 1.0A DC _(3.0)TYP VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
0.5
Rated DC Blocking Voltage
@T A=125℃
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
Dimensions in inches and (millimeters)
Rev.C
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.