PXT2222A Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistor

WILLAS
FM120-M
PXT2222A ^THRU
SOT-₁8_.09_{A S}P_Ul_Ra_Fs_ACti_Ec_M-_OE_Un_Nc_T a_SCp_Hs_Ou_TTl_Ka_Yte_BAT_RRra_IEn_R s_REis_CTt_Io_FIr_Es_{RS -20V- 200V}
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
TRANSISTO_• R_Lo(_wN_pP_roN_fi)_{le surface mounted application in order to}
SOT-89^SOD-123H
FEATURES_•
optimize board space.
Low power loss, high efficiency.
z Epitaxia• lHpiglahncaurrredniet ccaopnabsitlrituyc, ltoiownforward voltage drop.
1. BASE
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
z Pb-Fre^•e^Hp^iga^hc^sk^ua^rgg^ee^cais^paa^bv^ilia^tyi^.lable
• Guardring for overvoltage protection.
RoHS p_•r_Uo_ld_tru_ac_ht_igf_ho_-r_spp_ea_ec_dk_si_wng_itcc_ho_ind_ge_. suffix ”G”
Haloge^•n^Sfⁱr^le^ice^onp^er^poⁱd^tau^xc^iat^{l p}fo^larⁿp^aa^{r c}c^hkⁱi^pn^, g^mec^to^ad^{l s}e^ilis^couⁿff^ji^uxⁿ“^cH^tio”^n.
• Lead-free parts meet environmental standards of
2. COLLECTOR
3. EMITTER
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
MAXIMUM R_• RAoTHISNpGroSdu(cTt fao=r 2pa5c℃kingucnoldeesssuffoixt"hGe" rwise noted)
Halogen free product for packing code suffix "H"
Symbol MechanPaicraaml edtaerta
Value
Unit
V_CBO
C^•o^Ell^pe^oc^xt^yo^:r-^UB^La⁹⁴s^-e^V0V^ro^al^tt^ea^dg^fe^{lame retardant} 75
V
0.040(1.0)
0.024(0.6)
V_CEO
V_EBO
I_C
C^•o^Cll^ae^sc^eto^{: M}r-^oE^ldm^ei^dtt^pe^lr^asV^tio^cl^,ta^Sg^Oe^D-123H
40
V_,
• Terminals :Plated terminals, solderable per MIL-STD-750
Emitter-Base Voltage
6
V
Method 2026
C_•o_Pll_oe_lac_rt_io_tyr
Current -Continuous
: Indicated by cathode ban
d
600
mA
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
P_C
C_•o_Mll_oe_uc_nto_tinr _gP_Po_ow_sie_tir_onD_:is_As_ni_ypation
0.5
W
T_J
J•uWncetiigohnt :TAepmprpoexirmaatuterde0.011 gram
150
℃
T_stg
Storage_MTe_Am_XIp_Me_Ura_Mtu_Rre_{ATINGS AND} -_E5_L5_E~_C1_T5_R0_{ICAL C℃HARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
ELECT_SR_inIC_gleA_pL_haC_seH_hA_aR_{lf w}A_aC_veT_, E₆₀R_HI_zS_{, r}T_esIC_istS_ive(T_ofa_i=_nd2_u5_c℃_tiveu_lon_al_de_. ss otherwise specified)
For caPpaacriatimveeltoeard, derate current by 20% Symbol
Test conditions
Min
Max
Unit
Collector-base breakdowRAnTvINoGltaSge
Colle^Mct^ao^rkrⁱ-ⁿe^gm^Ci^ot^dte^er breakdown voltage
Maximum Recurrent Peak Reverse Voltage
Emitt_Mer_a-_xb_ima_us_me _Rb_Mre_Sa_Vk_od_lto_agw_en voltage
Colle_Mct_ao_xr_imc_uu_mt-_Do_Cff_Bc_lou_cr_kr_ine_gn_Vt _oltage
Emitt_Mer_axc_imu_ut-_mof_Af_vc_eru_ar_gr_ee_Fn_ot_{rward Rectified Current}
V_(BRS₎Y_CM_BOBOL FIM_C=1201-0MμH AFM,I1_E3=00-MH FM140-MH FM150-MH75FM160-MH FM180-MH FM1100-MHVFM1150-MH FM1200-
V_(BR)CEO I_C=¹²10mA, ¹I_B³=0 ¹⁴
VRRM
20
30
40
V_(BRV)ERBMOS I_E=₁1₄0μA, I_C2=₁0
28
I_CBVODC V_C2B0=60V, ₃₀I_E=0 ₄₀
15 ₄₀ 16
50
60
6
35
42
50
60
18
10 _V 115
120
80
100
150
200
V
56
70
105
140
0₈.₀01 ₁₀₀ μA ₁₅₀
200
I_EBOIO V_EB= 5V , I_C=0
1.0 ^{0. 01}
μA
Peak Forward Surge Current 8.3 ms single half sine-wave^hFE(_I¹_F⁾_SM
superimposed on rated load (JEDEC method)
h_FE(2)
Typical Thermal Resistance (Note 2)
DC cuTyrrpeicnatl Jguancintion Capacitance (Note 1)
Operating Temperature Range
h_FE^R₍₃^Θ₎ ^JA
CJ
h_{FE(4T) J}
Storage Temperature Range
h_FET₍S₅₎TG
V_CE=10V, I_C= 0.1mA
V_CE=10V, I_C= 1mA
V_CE=10V, I_C= 10mA
V_CE=10V_-5,₅I_tCo=₊1₁5₂0₅mA
V_CE=1V, I_C= 150mA
35
30
50
75 ⁴⁰
120
100
300 _{-55 to +150}
50 - 65 to +175
h_FE(6)
V_CE=10V, I_C= 500mA
40
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Colle^Mct^ao^xir^m-e^um^m i^Ft^ote^rwr^as^rdat^Vu^or^lta^at^gi^eon^at v^1.o⁰l^Ata^Dg^Ce
V_CE(sVatF)
I_C=500mA, I_B=₀5_.50₀mA
0.70
1 _0.85
V _0.9
0.92
Maximum Average Reverse Current at @T A=25℃ V_CE(saIRt)
I_C=150mA, I_B=15mA
0.5 0.3
V
Rated DC Blocking Voltage
@T A=125℃_VBE(sat)
I_C=500mA, I_B=50mA
10 _2.0
V
Base-emitter saturation voltage
NOTES:
V_BE(sat) I_C=150mA, I_B=15mA
0.6
1.2
V
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Trans_2-it_Tio_hen_rmf_are_{l R}q_eu_se_isn_tac_ncy_{e From Junction to Ambient}
f_T
V_CE=10V, I_C=20mA
f=100MHz
300
MHz
Output Capacitance
C_ob
V_CB=10V, I_E= 0,f=1MHz
8
pF
Delay time
Rise time
t_d
V_CC=30V, I_C=150mA
t_r
V_BE(off)=0.5V,I_B1=15mA
10
ns
25
ns
Storage time
Fall tim₂e_012-06
t_S
V_CC=30V, I_C=150mA
t_f
I_B1=- I_B2= 15mA
225
ns
WILL⁶A⁰ S ELECⁿT^s RONIC COR
2012-0
WILLAS ELECTRONIC CORP.