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MMBTA94LT1 Datasheet, PDF (3/3 Pages) WILLAS ELECTRONIC CORP – PNP EPITAXIAL PLANAR TRANSISTOR
WILLAS
FM120-M+
MMBTA94LTT1HRU
P1.N0APSEURPFIATCAEXMIAOULNPT LSCAHNOATTRKYTBRAARNRISERISRTECOTRIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drSopO. T-23
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental stan.d1a2rd2s(o3f.10)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G" .106(2.70)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.0.08101(g2r.a0m4)
MAXIMUM RAT.0IN70G(S1.A78N)D ELECTRICAL CHARACTERISTICS
.008(0.20)
.003(0.08)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Pea.k0R0e4v(e0rs.e1V0o)ltMagAeX.
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 Volts
Maximum Average Forward Rectified Current
IO
1.0
Amp
.020(0.50)
Peak Forward Surge Current 8.3 ms single half sine-wave .0I1FS2M(0.30)
30
Amp
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/W
Typical Junction Capacitance (Note 1)
CJ
120
PF
Operating Temperature Range
DimensioTJns in inches-5a5ntod+(1m25illimeters)
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM1400-.M03H7FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
0.037 VF
0.50 0.95
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃ 0.95
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmp
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.