MMBTA94LT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – PNP EPITAXIAL PLANAR TRANSISTOR

WILLAS
FM120-M+
MMBTA94LT^T1^HRU
1^P.0^NA^PSU^ER^PFA^ITCE^AM^XO^IAU^LNT^PS^LC^AHO^NT^ATK^RY^TB^RAR^AR^NIE^SR^IR^SE^TC^OTIF^RIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
We d^•e^Bc^ala^tcr^he ^pth^roa^ct^et^sh^se^dem^sa^igtⁿe^,ri^ea^xl^co^ef^llepⁿro^{t p}d^ou^wc^et ^{r dissipation offers}
better reverse leakage current and thermal resistance.
comp_•li_La_on_wc_pe_row_fii_lt_eh_sR_uro_faH_cS_{e m}re_oq_uu_ni_tr_ee_dm_ae_pn_plt_is_c._{ation in order to}
Pb-Freoeptpimaiczekabgoaerdisspaavcaei.lable
SOD-123H
RoHS^{• L}p^or^wod^pu^oc^wt^ef^ro^lr^osp^sa^,c^hk^igin^hg^efc^fo^icd^iee^ncs^yu^.ffix ”G”
• High current capability, low forward voltage drop.
Halog_• e_Hn_igf_hre_se_urp_gero_cd_au_pc_at_bf_io_litr_y.packing code suffix “H”
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Des^••c_UGr_lui_tp_raart^dhi^rio^ignhn^{g-sfopreoevdesrvwoitlctahginegp. rotection.}
The ^•M^SM^iliB^coTⁿA^e9^pi4^taL^xT^ia1^{l pla}is^nad^re^cs^hii^pg^,n^me^ed^taf^lo^sr^ilia^copⁿp^jl^uicⁿa^cttⁱi^ooⁿn^.
0.071(1.8)
SOT– 23^0.056(1.4)
that ^•re^Lq^eau^dir^-e^frs^eeh^pig^arh^tsv^mo^elt^ea^t g^ene^v.^{ironmental standards of}
MIL-STD-19500 /228
•^FeH^aig^•_M^th^uRH_e^oB^arHle_c^or^Se^gs_h^ea^pn_a^rk^ofd^r_n^deuo^e_i^cw_c^tpfrn_a^oord_lV^pu_d^aco^ctl_a^kft^oaⁱⁿ_t^rg^g_a^pe^acoc:^kdV^ienC^gsucE^fofiO^dxe"=^Gs4^u"f0^fix0^"(^HM^" in.) at IC=1mA
• Complementary to MMBTA94LT1
• Epoxy : UL94-V0 rated flame retardant
DEVI_•C_CE_aM_seA_:R_MK_oI_lN_deG_{d plastic, SOD-123H}
,
M•MTBeTrAm9i4nLaTl1s =:P4lZated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
COLLECTOR
3
1
BASE
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
2
EMITTER
Absolute Ma^Mx^ei^thm^odu²m⁰²⁶Ratings
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Ma_•x_Mim_ou_unm_tinT_ge_Pm_osp_ite_ior_nat_:u_Ar_ne_ys
Storage Temperature ............................................................................................
• Weight : Approximated 0.011 gram
-55
~
+150
°C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum^MP^Ao^Xw^IMer^UD^Mis^Rs^Aip^Ta^It^Nio^Gn^{S AND ELECTRICAL CHARACTERISTICS}
Rat_Tin_og_ts_aa_lt_P25_o℃_wea_rm_Dbie_isn_st t_ie_pm_ap_te_iora_ntu₍re_Taun₌le₂s₅s_°o_Cth₎e_.r_.w_.i_.s_.e_...s_.p_.e_..c_.i_.f_.ie_..d_.._{.............................................................. 350 mW}
S_•ing_Mle_ap_xh_ia_mse_uh_malf_Vw_oav_lte_a,_g6_e0H_sz_a, r_nes_dis_Ctiv_ue_ro_rf_ein_nd_tu_sct₍iv_Te_al₌oa₂d₅. _°C)
For_Vca_Cp_Bac_Oitiv_Ce l_ooa_lld_e,_cd_te_ora_rte_tocu_Brr_aen_st_eby_V2_o0_l%_{tage ...................................................................................... -400 V}
VCEO Collect^Ro^Ar^Tt^Io^NGE^Smitter Voltage ...^S.^Y..^M..^B.^O..^L..^F..^M.¹..².⁰.^-.^M.^H...^F.^M..¹.³.⁰.^-.^M..^H..^F.^M..¹.⁴.⁰.^-.^M..^H..^F.^M..¹.⁵.⁰..^-M..^H..^F..^M.¹..⁶.⁰.^-.^M.^H...^F.^M..¹.⁸..⁰.^-M..^H...^F.^M-¹4¹⁰0^0-0^MHV^{FM1150-MH FM1200-MH UNIT}
Mark_Vin_Eg _BCo_Ode_{Emitter to Base Voltage .......................}1_.2_..........1_.3_..........1_.4_..........1_.5_..........1_.6_...........1_..8_..........1_..0_{-6 V} 115 120
Max_Iim_Cum_CR_oe_llc_eur_cre_tont_rP_Cea_uk_rR_re_ev_ner_tse_..V_..o_.l_.t_.a_.g_.e_{.................}V_.R_..R_.M_.........2_.0_..........3_.0_..........4_.0_..........5_.0_..........6_..0_...........8_.0_{..... -15}10₀0 _mA 150 200 Volts
M_Caxi_hmu_am_rR_aM_cS_teVo_rlt_ia_sge_{tics (Ta=°25 C)}
VRMS
14
21
28
35
42
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
56
70
105
140 ^Volts
80
100
150
200 ^Volts
Maxim_Sum_ymAv_ber_oag_l e Forwar_Md R_inec_.tified Curr_Te_ynt_p.
M^Ia^O x.
Unit
Test Con¹d^.0itions
Amps
Peak F_Bor_Vwa_Crd_BS_Ourge Curren_-t₄8.₀3₀ms single half_-sine-wave _IFS-M
superim_Bp_Vos_Ced_Eo_On rated load_-(₄JE₀D₀EC method) _-
-
V
IC=-100uA, IE=0 ₃₀
V
IC=-1mA, IB=0
Amps
Typica_Bl T_Vhe_Erm_Ba_Ol Resistance_-(₆Note 2)
-
RΘ_-JA
V
IE=-10uA, IC=0 ⁴⁰
℃/W
Typical J_ICun_Bcti_Oon Capacitance_-(Note 1)
-
-1^C0^J 0
nA
VCB=-400V, IE=0 ¹²⁰
PF
Operatin_Ig_ET_Be_Omperature Rang_-e
-
-1^T0^J 0
nA^{-55 to +12}V⁵EB=-6V, IC=0
-55 to +150
℃
Storage_IT_Cem_Ep_Serature Range_-
-
-^T5^ST0^G0
nA
VCE=-400V, VBE^{- 6}=⁵0^{to +175}
℃
*VCE(sat)1_CHARAC-_TERISTICS -
Max^*im^Vu^Cm^EFo^(srw^aa^tr⁾d²Voltage at^-1.0A DC ^-
-200
mV IC=-1mA, IB=-0.1mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
-3_V0_F 0
mV ₀I_.5C₀=-10mA, IB₀=_.7-₀1mA
0.85
0.9
0.92 Volts
Max^*im^Vu^Cm^EA⁽v^ser^aa^tg⁾e³Reverse C^- urrent at @T^-A=25℃
Rate^*d^VD^BC ^EBlo^(sck^ain^tg⁾ Voltage ^-
@T ^-A=125℃
-600
-9^IR00
mV IC=-50mA, IB=-5mA_0.5
mV IC=-10mA, IB=-1mA₁₀
mAmps
*hFE1
50
-
-
VCE=-10V, IC=-1mA
NOTES:_*hFE2
75
-
200
1- Measu_*r_hed_Fa_Et 1₃MHZ and ap₆pl₀ied reverse volta_-ge of 4.0 VDC. _-
2- Therm_*a_hl R_Fe_Esis₄tance From J₂un₀ction to Ambien_-t
-
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
Cob
-
4
6
pF VCE=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.