2SB1188 Datasheet, PDF (3/3 Pages) Rohm – Medium power Transistor(-32V, -2A)

WILLAS
1S.0AOSTUR-8FA9CEPMlaOUsNtTicS-CEHOnTcTaKYpBsAuRlRaIEtReRTECraTInFIEsRiSs-t2o0Vr-s200V
SOD-123+ PACKAGE
FM120-M+
THRU
2SB1_F1_M8₁8_200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
O u t l i n e D r a w i n g • Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.181(4.60)
• Epoxy : UL94-V0 rated flame retardant
.173(4.39)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.061REF
• Polarity : Indicated by cathode band
(1.55)REF
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
S O T- 8 9 0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.063(1.60)
.055(1.40)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Mark^.in¹g⁶C⁷od⁽⁴e ^.25)
Maxim_.1um₅₄R₍e₃cu_.r₉re₁n₎t Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-M_.1H ₀FM₂1₍5₂0-M_.6H₀FM₎ 160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14
15
16
18
10
115 120
VRRM
20
30
40 ^.0915⁽0^2.30)60
80
100
150
200 Volts
VRMS .02314(0.58)21
28
35
42
56
70
105
140 ^Volts
VDC ^.012⁶0^(0.40)30
40
50
60
80
100
150
200 ^Volts
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on^.r⁰at⁴ed⁷l⁽o¹ad^.2(J⁾EDEC method)
IFSM
30
Amps
Typical Thermal.R0e3si1st(a0nc.e8()Note 2)
RΘJA
40
℃/W
Typical Junction Capacitance (Note 1)
CJ
120
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
.060TYP
.197(0.52)
CHARACTERISTICS^(1.50)TYP SYMBOL FM120-MH FM130-MH F_.0M1₁4₃0-M₍₀H_.F₃M₂15₎0-MH FM160-MH FM180-M.0H1FM71(1000.-4M4H )FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
.118^VT^FYP
0.50
0.70
.⁰0^.1⁸⁵4(0.35) ^0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃_(3.0)TIRYP
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
Dimensions in inches and (millimeters)
WILLAS ELECTRO_RN_eIC_v.CCORP.
WILLAS ELECTRONIC CORP.