2SB1188 Datasheet, PDF (1/3 Pages) Rohm – Medium power Transistor(-32V, -2A)

SOT-89 Plastic-Encapsulate Transistors
2SB1188
TRANSISTOR (PNP)
FEATURES
z Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)
z Complements the 2SD1766
z _{Weight: 0.05 g}
z RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V_CBO
V_CEO
V_EBO
I_C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
-40
V
-32
V
-5
V
-2
A
SOT-89
1. BASE
2. COLLECTOR1
2
3. EMITTER
3
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
0.5 (2.0*) _W
150
℃
-55-150
℃
* When mounted on a 40*40*1mm ceramic board.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V_(BR)CBO I_C=-50μA , I_E=0
-40
V
Collector-emitter breakdown voltage
V_(BR)CEO = I_C= -1mA , I_B 0
-32
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=-50μA, I_C=0
-5
V
Collector cut-off current
I_CBO = V_CB=-20 V , I_E 0
-1
μA
Emitter cut-off current
I_EBO = V_EB=-4 V , I_C 0
-1
μA
DC current gain *
h_FE
V_CE= -3V, I_C= -0.5A
82
390
Collector-emitter saturation voltage *
V_CE(sat)
Transition frequency
f_T
Output capacitance
C_ob
* Measured using pulse current.
CLASSIFICATION OF h_FE
Rank
P
Range
82-180
Marking
BCP
P/N
2SB1188P
I_C=-2A, I_B= -0.2A
V_CE=-5V, I_C=-0.5A ,f=30MHz
V_CB=-10V, I_E=0 ,f=1MHz
Q
120-270
BCQ
2SB1188Q
-0.8
V
100
MHz
50
pF
R
180-390
BCR
2SB1188
2012-0
WILLAS ELECTRONIC CORP.