SMG2302B Datasheet, PDF (2/6 Pages) WILLAS ELECTRONIC CORP – 20V N-Channel Enhancement-Mode MOSFET

20V N-Channel Enhancement-Mode MOSFET
SMG2302B
ELECTRICAL CHARACTERISTICS
Symbol Parameter
STATIC PARAMETERS
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
ID(ON)
On-State Drain Current ^a
RDS(ON)
Drain-Source On-Resistance
VSD
Diode Forward Voltage
DYNAMIC PARAMETERS
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±8V
VDS=20V, VGS=0V
VDS=20V, VGS=0V
TJ=55℃
VDS≧5V, VGS= 4.5V
VDS≧5V, VGS= 2.5V
VGS=4.5V, ID= 2.8A
VGS=2.5V, ID= 2.5A
VGS=1.8V, ID= 2.2A
IS=1A, VGS=0V
20
V
0.6 0.9 1.2
±100 nA
1
μA
10
6
A
4
55
85
65 115 mΩ
80 130
0.75 1.2
V
9
VDS=10V, VGS=4.5V, ID=2.8A
2.2
nC
3
450
VDS=10V, VGS=0V, f=1MHZ
72
pF
22
9
VDD=10V, RL =10Ω
VGEN=4.5Ω, RG=6Ω
23
ns
38
3
Notes:
a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%
2014-05
WILLAS ELECTRONIC CORP.