SMG2302B Datasheet, PDF (1/6 Pages) WILLAS ELECTRONIC CORP – 20V N-Channel Enhancement-Mode MOSFET

20V N-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON)≦85mΩ@VGS=4.5V
● RDS(ON)≦115mΩ@VGS=2.5V
● RDS(ON)≦135mΩ@VGS=1.8V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
● S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
APPLICATIONS
● Power Management in Notebook
● Portable Equipment
● Load Switch
● DSC
1
Ordering Information
Device
SMG2302B
Marking
02B
Shipping
3000/Tape& Reel
SMG2302B
SOT– 23
3
2
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDSS
20
Gate-Source Voltage
VGSS
±8
Continuous Drain
TA=25℃
2.8
ID
Current(tJ=150℃)
TA=70℃
2.2
Pulsed Drain Current
IDM
10
Maximum Body-Diode Continuous Current
IS
1.6
TA=25℃
1.25
Maximum Power Dissipation
PD
TA=70℃
0.8
Operating Junction Temperature
TJ
150
Maximum Junction-to-Ambient
T≦10 sec
77
RthJA
Steady State
105
*The device mounted on 1in² FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃
℃/W
2014-05
WILLAS ELECTRONIC CORP.