SMG2301B Datasheet, PDF (2/6 Pages) WILLAS ELECTRONIC CORP – 20V P-Channel Enhancement-Mode MOSFET

SMG2301B
20V P-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Symbol
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-Resistance ^a
VSD
Diode Forward Voltage
DYNAMIC
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Rg
Gate resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall time
Limit
Min Typ Max Unit
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VDS=0V, VGS=±8V
VDS=-20V, VGS=0V
VGS=-4.5V, ID= -2.8A
VGS=-2.5V, ID= -2.0A
IS=-1A, VGS=0V
-20
V
-0.4 -0.6 -1
V
±100 nA
-1
μA
90 110
mΩ
110 150
-0.7 -1.4
V
VDS=-6V, VGS=-4.5V,
ID=-2.8A
V_DS=0V, V_GS=0V, f=1MHz
VDS=-15V, VGS=0V,
f=1MHz
VDS=-6V, RL =6Ω
RGEN=6Ω, VGS=-4.5V
7.2
2.2
nC
1.2
7.5
Ω
480
46
pF
10
50
30
ns
40
11
2014-05
WILLAS ELECTRONIC CORP.