SMG2301B Datasheet, PDF (1/6 Pages) WILLAS ELECTRONIC CORP – 20V P-Channel Enhancement-Mode MOSFET

20V P-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON) ≦110mΩ@VGS=-4.5V
● RDS(ON) ≦150mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON)
SMG2301B
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
Ordering Information
Device
SMG2301B
Marking
01B
Shipping
3000/Tape& Reel
SOT– 23
3
3_D
G
1
1
S
2
2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Tj=150℃)*
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
Tstg
RθJA
Limit
-20
±8
-2.0
-1.6
-10
0.7
0.45
-55 to 150
-55 to 150
Typical
Maximum
100
175
Unit
V
V
A
A
W
℃
℃
℃/W
2014-05
WILLAS ELECTRONIC CORP.