SESDL5V0WB Datasheet, PDF (2/2 Pages) WILLAS ELECTRONIC CORP – Transient Voltage Suppressors for ESD Protection

WILLAS
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SOD-123+ PACKAGE
SESDL5V^F0^MW_T¹_HB²_R⁰_U^-M+
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
ELECTRI^••C_HLA^oiL_gwhC^pcH^ouwA_rreR_ernA^ltoC_csT_asp,E_ahR^ibgI_iS^hlitT^eyI_,fC^fliocS_wie(_fnT_oca_ryw=^. _a2_rd5°_vC_oltu_an_gle_es_ds_roo_pth_. erwise noted)
• High surge capability.
Symbol^{• Guardring for overvo}P^lta^ar^ga^em^pre^ott^ee^cr^tion.
• Ultra high-speed switching.
I_PP
• S^Mili^aco^xin^me^up^mita^Rxi^ea^vl^ep^rl^sa^ena^Pr^ec^ah^kip^P, ^um^lse^eta^Cl s^uil^ri^rc^eoⁿn^t junction.
V_C
V_RWM
• L_Cea_lad_m-fr_pe_ine_gpa_Vr_ots_ltam_ge_ee_@t en_IPv_Pironmental standards of
MIL-STD-19500 /228
• RWoHoSrkpinrogduPcet afokr RpaecvkeinrgsecoVdoeltsaugffeix "G"
I_R
H_Malo_ag_xe_imn _ufr_mee_Rpr_eo_vd_eu_rc_st_efo_Lr_ep_aa_kck_ai_gn_eg c_Co_ud_re_res_nuf_tfi_@x "H_V"_RWM
Mechanical data
V_BR
Breakdown Voltage @ I_T
• Epoxy : UL94-V0 rated flame retardant
I_T
Test Current
• Case : Molded plastic, SOD-123H
C
•
Max. Capacitance
Terminals :Plated te
r^@mi^Vn^Ra⁼ls⁰,
and f =1MHz
solderable per
,
MIL-STD-750
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
ELECTRI^•C^MA^oL^uCⁿH^tinA^gR^PA^oC^siT^tiE^onR^:IS^ATⁿI^yCS (Ta = 25°C unless otherwise noted)
• Weight : Approximated 0.0_V1_RW1_Mgram _{IR (μA)}
V_BR (V) @ I_T
VC
Device
I_T
Device _{MAXIMUM RATIN}(V_G) _{S A}@_NDV_REWMLECTRIC(N_Ao_Lte _C2)_HARACTERIS@_TIP_IP_C=_S5 A
Marking
Ratings at 25℃ ambient temperaturMe auxnless othMearwxise specMifiiend. Max mA
V
I_PP(A)
Max
V_C (V)
@Max I_PP
Max
C (pF)
Max
S_SEin_Sg_Dle_Lp₅h_Va₀s_We _Bhalf wave, 6_E0H_Bz, resisti₅ve_.0of induct₁iv_.e₀load. _5.8
8.8 1.0
10
11.2 12.5
30
For capacitive load, derate current by 20%
2. V_BR is measured with a pulse test current I_T at an ambient temperature of 25°C.
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^V
Maximum Average Forward Rectified Current
IO
1.0
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
A
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
IR
0.5
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.