|
SESDBV5V0WB Datasheet, PDF (2/2 Pages) WILLAS ELECTRONIC CORP – Transient Voltage Suppressors for ESD Protection | |||
|
◁ |
WILLAS
SESDBV5FVM0WT1H2BR0U-M+
T1ra.0nAsSieUnRtFAVCoEltMagOeUNSTuSpCpHrOesTTsKoYrsBAfoRrREIESRDREPCroTItFeIcERtiSon-20V- 200V
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
Package outline
⢠Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
⢠Low profile surface mounted application in order to
SOD-123H
optimize board space.
⢠Low power loss, high efficiency.
ELEâ¢CHTigRhICcuArLreCntHcAaRpaAbCilTityE,RloIwSTfoICrwSa(rTdavo=lt2a5g°eCdruonple. ss otherwise noted)
0.146(3.7)
0.130(3.3)
⢠High surge capability.
⢠Guardring for overvoltage protection.
Sym⢠Ublotral high-speed switPchainrag.meter
IPP ⢠Silicon MepaitxaimxiaulmplRaneavrecrsheipP, meaektaPl suillsiceoCnujurrnecntiton.
⢠Lead-free parts meet environmental standards of
VC MIL-STCDl-a1m95p0in0g/2V2o8ltage @ IPP
VRWâ¢MRoHS prWodourcktinfogr pPaecakkingRecovdeersseufVfixol"tGag" e
Halogen free product for packing code suffix "H"
IR MechaMnaxiicmauml dRaevtearse Leakage Current @ VRWM
VBR⢠Epoxy :BUrLe9a4k-dVo0wrnatVeodltfalagmee@reItTardant
IT ⢠Case : MToelsdteCduprlraesnttic, SOD-123H
,
⢠Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
⢠Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
⢠Mounting Position : Any
⢠Weight : Approximated 0.011 gram
ELECTRICAMLACXHIMARUAMCTREARTISINTGICSSA(TNaD=2E5âLEuCnTleRssICoAthLerCwHisAe RnoAteCdT)ERISTICS
Ratings at 25â ambient temperature unlVesRsWoMtherwIiRs(eμsAp)ecifieVd.BR(V)@IT
Single phaDseehvaiclfew* ave, 60HzD, reevsiicsteive of in(Vdu)ctive @loaVdR. WM
(Note2)
For capacitive load, derate cuMrraenrkt ibnyg20%
IT
VC (V)
C(pF)@
(mA) @IPP=5A VR=0V,f=1MHz
RATINGS
Max
Max Min Max -
-
Typ
Max
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
MarkinSgECSoDdeBV5V0WB
HB
5
1
152.6 138
141
1510 16 2 18 - 10
115 120
M*OaxtihmeurmvRoeltcaugrreesntaPveaaiklaRbeleveurspeoVnorlteaqgeuest.
VRRM
20
30
40
50
60
80
100
150
200 V
M2a.xVimBuRmisRmMeSaVsoultraegde with a pulse test current IT aVt RaMnSambie1n4t temp2e1rature o2f825â. 35
42
56
70
105
140 V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 V
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RÎJA
40
â
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25â
Rated DC Blocking Voltage
@T A=125â
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
IR
0.5
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
|