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SESDBV5V0WB Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – Transient Voltage Suppressors for ESD Protection
WILLAS
FM120-M+
SESDBV5V0WTHBRU
T1ra.0nAsSieUnRtFAVCoEltMagOeUNSTuSpCpHrOesTsTKoYrsBfAoRrREIESRDRPECroTItFeIcEtRiSon-20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
DESCRIPT• ILOowNpower loss, high efficiency.
• High current capability, low forward voltage drop.
The SE•SHDigBhVsu5rVg0eWcaBpabisilidtye. signed to protect voltage sensitive
0.146(3.7)
0.130(3.3)
WBFBP-02C
componen•tsGufraormdrinEgSfoDr.oEvexrcveolltlaegnet pcrloatmecptiionng. capability, low leakage,
and fast re•sUplotrnasheighti-mspeeepdrosvwiidtcehibnge.st in class protection on designs that
• Silicon epitaxial planar chip, metal silicon junction.
are expose• dLetaodE-frSeDe p. aBrtescmaeuesteenovfiriotsnmsemnatalll sstiazned,airtdissosf uited for use in
(1.0*0.6*0.5)
unit:mm
cellular ph•oRnMoeIHLs-S,SpMTrDoPd-13uc9tp5f0loa0ryp/e2ac2rsk8i,ngdicgoidtealsucfafixm"Ge"ras and many other portable
applicationsHwalohgeernefrbeeoparrodduscpt faocr peaicskinagt caodperesumffiixu"mH".
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
FEATURE•SCase : Molded plastic, SOD-123H
,
z Reve•rsTeermWinoarlksin:Pgla(tSedtatenrdm-iOnaffls),Vsoolldtaergaeb:le5p.e0r VMIL-STD-750
Method 2026
z Low L• ePaoklaarigtye: Indicated by cathode band
z Resp•oMnsouenTtinimg PeoissitTioynp:iAcnaylly < 1 ns
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
z ESD •RWaetiingght o: Af pCplraosxsim3at(e>d 01.001k1Vg)raPmer Human Body Model
z IEC61000−4−2 Level 4 ESD Protection
z
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Pb-Free package is available
Ratings at 25℃ ambient temperature unless otherwise specified.
SRinogHle Sphpasreodhaulfcwt afvoer, p60aHczk, irnegsisctivoedoef isnduuffcitxive”Gloa”d.
FHoracloapgaecintivfereloeadp, rdoerdautecctufrorernpt bayc2k0i%ng code suffix “H”
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 V
MaxMimaxiummumRDCatBilnocgksing@VoTltaag=e25℃
VDC
20
30
40
50
60
80
100
150
200 V
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge Current 8.3 ms single Phaalfrsainme-ewtaevre IFSM
Symbol
Limit Unit
30
IECsu6p1er0im0p0os−e4d −on2r(aEtedSlDoa)d (JEDEC method)
Air
±5
Typical Thermal Resistance (Note 2)
RΘJA
Contact
4±05
kV
℃
Typical Junction Capacitance (Note 1)
CJ
120
ESODpeVraotinltgaTgeemperature Range
PerTJHuman Bod-5y5Mtoo+d12e5l
10
-55 ktoV+150
Storage Temperature Range
TSPTGer Machine Model
- 65 t4o0+0175
V
Total
Power
DissiCpHaAtiRoAnCToEnRFISRTIC-5S Board
(NoStYeM1B)OL
P FM120-MH
FM130-MH
FM140-MH
FM1D50-MH
FM160-M1H00FM180-MH
mW
FM1100-MH
FM1150-MH FM1200-MH
U
TheMramximaul mRFeosrwisatradnVcoletagJeuant c1.t0ioAnD−Cto−Ambient VF
0.50
Maximum Average Reverse Current at @T A=25℃
IR
LeaRdateSdoDlCdeBlrocTkeinmg Vpoeltargaeture − Max@imTAu=m125(℃10 Second Duration)
RΘJA0.70
1250
0.5
0.85℃/W
0.9
TL
10260
℃
0.92
m
JunNOcTtiEoSn: and Storage Temperature Range
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Tj, Tstg
-55 ~ +150
℃
Stres2-sTehseremxacleReedsiisntagncme aFxroimmJuumnctriaontintogAsmmbieanyt damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.