SEMF3V3LC Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – Low Capacitance Quad Array for ESD Protection Description

WILLAS
Low Capacitance Quad Array for ESD Protection Description
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
SEM^FF3^MV3¹LC^20-M+
THRU
FM1200-M+
Pb Free Product
Features
Elec• tBraitcchapl rPocaersas dmeseigtne,rexcellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
S^•y^Lm^owbo^pl^{ower loss, high efficien}P^cya^. rameter
• High current capability, low forward voltage drop.
• H_IPig_Ph surge_Mca_ap_xa_imbil_uit_my. _{Reverse Peak Pulse Current}
• Guardring for overvoltage protection.
• U^Vl^Ctra high-s^Cp^le^ae^md^psⁱwⁿi^gtc^Vhi^on^lg^ta. ^{ge @ IPP}
•_VS_Ri_Wlic_Mon epit_Wax_oia_rkl p_inla_gna_Pr_ec_ah_kip_R, m_ee_vt_ea_rl_ss_eilic_Vo_on_ltj_au_gnc_etion.
•
•
R^LMIeo^RIH^aLd-S^S-fp^Trr^eDo^ed^-1u^pMVc^9atR^5arfW^t0o^xs0rM^immp^/2a^euc^2emk^8tin^eg^nRvco^ierd^ove^nems^ru^sef^efⁿix^t
a_Ll _est_aa_kn_ad_gar_eds_Cof_urrent
"G"
@
H_Ia_Tlogen fre_Te _epr_so_td_Cuc_ut _rfo_rer _npa_tcking code suffix "H"
Mechanical data
V_BR
Breakdown Voltage @ I_T
• Epoxy : UL94-V0 rated flame retardant
•
C^Ia^F s e
:
Forward Current
Molded plastic, SOD-123H
•
T^VeFrminals
:^FP^ola^rt^wed^art^derm^Voin^la^tals^g,^eso^@lde^IrFable
per
,
MIL-STD-750
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Elec_• t_Mr_oic_una_til_nC_{g P}h_oa_sir_tia_onc_:t_Ae_nr_yistics
Par•t NWueimghbt e: Arspproximated 0.V01_B1_Rgram
Dimensions in inches and (millimeters)
V_F
C
MAXIMUM RATINGS AND ELECTR_ITICAL CH_VA_RR_WA_M CTERIS_IT_RICS
Ratings at 25℃ ambient t^Memⁱⁿp^.eratu^Tre^yu^pn^.less ^Moth^ae^xr^.wise specified.
Max.
Typ.
I_F
0v
Single phase half wave, 60Hz, resistive of inductive load.
bias
For capacitive load, derate c_Vurrent by_V20% _V
mA
V
µA
V
mA
pF
SEMF3V3LC ^RATI5^N.^G3^S 5.6
Marking Code
5.88 ^SYMBOL1^{FM120-MH FM}3¹³.⁰3^{-MH FM140-M}1^H.^F0^{M150-MH FM}1¹.⁶2⁰5^{-MH FM180-M}2^H00^FM1100-MH2^F8^{M1150-MH FM1200-MH U}
12
13
14
15
16
18
10
115 120
Ma1xi.mumNRoencu-rrreepntePtietaivkeRecvuerrsree nVtolptaegre Figure 1. VRRM
20
30
40
50
60
80
100
150
200 V
Ma₂xi_.mum_OR_nM_lyS V₁o_dlta_ioge_{de under power. For 4 dio}V_dR_eM_sS _unde1_r4_power21
28
35
42
56
70
105
140 ^V
Ma₃xi_.mum_CD_aC_pB_al_coc_itk_ain_ng_cV_eol_ota_fge_{one diode at f=1MHzV,TDCA=25℃}20
30
40
50
60
80
100
150
200 ^V
Maximum Average Forward Rectified Current
IO
1.0
A
Pea_Tk_yFo_prw_ia_crd_aS_lu_Crge_hC_aur_rre_an_ct 8_t.3_em_rs_issin_tg_icle _shalf sine-wave _IFSM
superimposed on rated load (JEDEC method)
30
A
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
IR
0.5
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
201₂₀-0_12-06
Figure 1 Pulse Width
Figure 2 Power Derating Curve
WILLAS E_WL_IE_LC_LT_AR_SO_EN_LI_EC_CC_TRO_OR_NP_I._{C CORP}