SCS751CS-40T5G Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – 30mA Surface Mount Schottky Barrier Rectifiers - 40V

WILLAS
FM120-M
THRU
30mA S_1.u_0Arf_Sa_Uce_RFM_Ao_Cu_En_Mt_OS_Uc_Nh_To_Stt_Ck_Hy_OB_Ta_Tr_Kr_Yie_Br_AR_Re_Rc_IEti_Rfie_Rr_Es_C-_T4_IF0_IEV_{RS -20V-}^S₂₀^C_0V^S751CS-4_F⁰_M^T₁⁵₂^G_00-M
SOD-923 P_Sa_Oc_Dk_-a₁₂g₃e_{+ PACKAGE}
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
zEle^oc^ptr^tii^mca^izl c^eh^ba^or^aa^rc^dte^sr^pis^at^cic^e.curves
• Low power loss, high efficiency.
•
High₁₀₀current
capability,
low
forward
voltage
100000
drop.
Ta=125℃
10
• High surge capability.
SOD-123H
0.146(3.7)
0.130(3.3)
f=1MHz
0.012(0.3) Typ.
• Gua1r0dring forTao=7v5e℃rvoltage protection. ₁₀₀₀₀
• Ultra hiTgah=1-2s5℃peed switching.
Ta=75℃
• Silico¹n epitaxial planar Tcah=2i5p℃, metal silic1o0n00 junction.
• Lead-free parts meet e_Tan_=-v₂i₅r_℃onmental standards of
Ta=25℃
1
MIL-^0.S¹ TD-19500 /228
100
• RoHS product for packing code suffix "G"
Halo^0.g⁰¹en free product for packing code suffix¹⁰"H"
Ta=-25℃
0.071(1.8)
0.056(1.4)
Mech _0.001 anical data
1
0 100 200 300 400 500 600 700 800
• Epoxy : UL94-V0 rated flame retardant
FORWARD VOLTAGE：VF(mV)
0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
• Case : Mold^VFe^-d^{IF C}p^Hla^ARs^At^Ci^Tc^E,^RS^ISTO^ICD^S -123H
VR-IR CHARACTERISTICS
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.1
0
0.031(0.8) Typ.
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30 ^0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
330
Method 2026
1000
Ta=25℃
900
• Polarity : Indicated by cath_Io_F=d_1me_Aband
320
n=30pcs
800
• Mounting Position : Any
700
•
310
Weight
:
Approximated
0.011
gram
600
500
Ta=25℃
VR=30V
n=30pcs
10
9
Ta=25℃
Dimensions in inches andf=(1mMHilzlimeters)
8
VR=0V
7
n=10pcs
6
5
300
400
4
MAXIMUM RATINGS AND EL₃₀E₀ CTRICAL CHARACTERISTIC₃ S
AVE:111.0nA
Ratings at 2529℃0 ambient temperature unless otherwi²s⁰⁰e specified.
2
Single phase half wave, 60^AH^VEz^:3,⁰r⁴e^.2s^mi^Vstive of inductive l¹o⁰a⁰ d.
1
For capacitiv²e⁸⁰ load, derate current by 20%
0
0
AVE:1.81pF
R^VFA^DT^ISIN^PEG^RSS^{ION MAP}
SYMBOL FM^IR1^D2^IS0^P-M^ERH^SIOF^NM^M13^A0^P-MH FM140-MH FM150-MH FM^Ct1^D6^I0^SP-M^ERH^SIOF^NM^M1^A8^P0-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Rec₂u₀ rrent Peak Reverse Voltage
Maximum RMS Voltage
Ifsm
1cyc
Maximum DC₁B₅ locking Voltage
8.3ms
Maximum Average Forward Rectified Current
12
3^V0 ^RRM
20
VRMS
14
25
VDC
20
20 _IO
13
14
30
40
21Ta=25℃ 28
IF=0.5A
30IR=1A 40
Irr=0.25*IR
n=10pcs
15
10 ⁵⁰
35
8 ₅₀
6
16
60
42
Ifsm
60
1.0
18
10
80
100
56
70
8.3⁸m⁰s 8.3ms ¹⁰⁰
1cyc
115 120
150
200
105
140
150
200
10
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JED^AE^VEC^:3.m⁴⁰e^Athod)
5
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
0
Operating Temperature Range
Storage Temperature Ra_IFn_Sg_Me_{DISRESION MAP}
15
IFSM
10
5^RΘJA
CJ
0 _TJ
TSTG
AVE:11.7ns
-55 to +125
trr DISPERSION MAP
4
30
2
40
120
0
1
10
-55 t₁o₀₀+150
IFSM-NC^{-UY6MCL5BEERt}C^oHOA^+FR1CAY7CCT^5LEERSISTICS
CHARACTERISTICS
Maximum Forw¹⁰ard Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
1000_VF
0R.t5h(0j-a)
0.05
0.70
0.85
0.9
0.92
Maximum Aver₈age Reverse Current_Ifa_smt @T A=25℃
t
IR
Rated DC Blocking Voltage
@T A=125℃
6
NOTES:
100
1- Measured at 1₄MHZ and applied reverse voltage of 4.0 VDC.
Rth(j-c)
Mounted on epoxy board
IM=10mA
IF=100mA
0.04
0.5
10
0.03
Sin(θ＝180)
0.02
D=1/2
DC
2- Thermal Resistance From Junction to Ambient
2
1ms time
0.01
0
1
TIME1:t0(ms)
100
IFSM-t CHARACTERISTICS
10
0.001
300us
0.T1IME:t(ms) 10
Rth-t CHARACTERISTICS
1000
0
0 0.01 0.02 0.03 0.04 0.05
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2012-06
2012-11
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.