SCS751CS-40T5G Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – 30mA Surface Mount Schottky Barrier Rectifiers - 40V

WILLAS
FM120-M+
THRU
30mA₁S_.0u_Arf_Sa_Uc_Re_FAM_Co_Eu_Mnt_OS_Uc_Nh_To_St_Ctk_Hy_OB_TTa_Kr_Yrie_Br_AR_RRec_IEt_Rifi_Re_Ers_CT-_I4_FI0_EV_{RS -20V- 2}^S₀₀^C_V^S751CS-4_F⁰_M^T₁⁵₂^G_00-M
SOD-923 _SP_Oa_Dck_-1a₂g₃e_{+ PACKAGE}
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
zApoppltiimcaizteiobnoasrd space.
L^•o^Lw^owcu^porr^we^en^r t^lor^se^sc^{, h}tiⁱf^gi^hca^eft^fiⁱo^cin^ency.
• High current capability, low forward voltage drop.
• High surge capability.
zF_•e_Gat_uu_arr_de_rs_{ing for overvoltage protection.}
Ex^•tr^Ue^lm^trae^hly^igs^hm^-sa^pll^es^eu^dr^sfa^wc^ite^chmⁱⁿo^gu^. nting type. (SOD-923)
Lo^•w^SilV^icF^{on epitaxial planar chip, metal silicon junction.}
• Lead-free parts meet environmental standards of
High_Mr_ILe_-li_Sa_Tb_Dili_-t₁y₉. _{500 /228}
W^•e^Rd^oe^Hc^Sla^pr^roe^dt^uh^ca^{t f}t^ot^rh^pe^acm^kina^gte^cr^oi^da^el ^so^uf^ffp^ixro^"Gd^"uct
com^Hp^al^li^oa^gn^ecⁿe^frew^eit^ph^roR^duo^cH^{t f}S^or r^pe^aq^ckuⁱⁿir^ge^cm^ode^en^sts^uf.^{fix "H"}
PbM-Ferece hpaacnkaigceaisl advaitlaable
Ro_•H_ES_pop_xro_yd_:u_Uc_Lt ₉fo₄r_-Vpa₀c_rk_ai_tn_eg_dc_fo_lad_me_es_ru_eff_ti_ax_rd”G_a”_nt
Ha_•lo_Cg_ae_sn_ef_:re_Me_op_ldro_ed_du_pc_lt_af_so_tir_cp_, a_Sc_Ok_Din_-g₁₂co₃d_He suffix “H”
,
z C^•o^Tn^ers^mtrⁱⁿu^ac^lsti^:o^Pn^{lated terminals, solderable per MIL-STD-750}
Silicon epitax^Mia^el^tp^hl^oa^dn²a⁰r²⁶
• Polarity : Indicated by cathode band
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
1 0.056(1.4)
2
SOD-923
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
1
Cathode
Dimensions in inches and (millimeters)
2
Anode
• Mounting Position : Any
DEVICE MARKING AND ORDERING INFORMATION
• Weight : Approximated 0.011 gram
Device
Marking
Shipping
SCS751CS-^M40^AT5^XG^{IMUM RATIN}5 ^{GS AND ELECT}8^R00^I0^C/T^Aa^Lpe^C&^HRe^Ae^Rl ^ACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Si^zng^Ale^bsp^oha^lus^te^eh^mal^af ^xwⁱa^mv^ue^m, 60^raH^tzⁱⁿ, ^gre^ssi⁽s^Tt^aiv⁼e²o⁵f^°Cin⁾ductive load.
For capacitive load, d^Pe^ara^rate^mc^eur^tere^rnt by 20%
Symbol
Limits
Unit
Reverse voltage (_Rre_Ap_Te_INti_Gtiv_Se peak)
MMaarx_ARkimi_ven_eug^v_mreC_aroR_gsde_eeec_rvueorrcle^tt_n^aif_t^gie_P^ed_ea^(fD_koCRrwe^)a_{verdrsecuVrorletangte}
Forward current surge peak （60Hz・1cyc）
Max_Jim_unu_cm_tiR_oM_n S_teV_mol_pta_eg_re_ature
Max_Sim_tou_rm_agD_eC_tB_el_moc_pk_ein_rg_aV_tuo_rlt_eage
SYM^VBO^RML FM120-MH FM130-M⁴H⁰FM140-MH FM150-MH FM^V160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V_{R 12}
VVRRMR_IM_FS^IT_S^oj_M
20
14
13
30
30
30
14
40
21
200
125
28
15
50
mV¹⁶A⁶⁰
35
m_℃4A₂
18
10
115 120
80
100
150
200
56
70
105
140
VD_TC_stg 20
-³4⁰0 to +1⁴2⁰5
50
℃⁶⁰
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
zElectrical characteristic (Ta=25°C)
Peak Forward
superimposed
Surg_Pe_aC_ru_ar_mren_et_t8_e._r3 ms single half
on rated load (JEDEC method)
sine-wave
Symbol
IFSM _Min.
Typ^Fic^oa^rl ^wTh^ae^rr^dm^va^ol R^ltaes^gis^etance (Note 2)
V_{F RΘJA} -
Typ^Ric^eal^vJ^eu^rn^sc^etio^cn^uC^rra^epⁿa^tcitance (Note 1)
I_R
CJ ^-
Typ. Max.
0.37
0.5
Unit
30_Conditions
V
I_F=1m₄A₀
µA
V_R=3₁0₂V₀
Ope^Cra^at^pin^ag^cT^ite^amⁿp^ce^era^btu^er^te^wR^ea^enⁿge^terminals
Ct _TJ -
2-55 to +12-5
pF
V_R=1V , f=1MHz-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
Electricalch_Ca_Hra_Ac_Rt_Ae_Cr_Tis_ERti_Ic_S_Tc_ICu_Srves(Ta=25_S^O_YC_MB) _{OL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH}
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
0.003
0.1
Rated DC Blocking Voltage
@T A=125℃
IR
0A
0.08
0V
NOTES:
0.002
1- Measured at 1 MHZ and applied reverse voltage o0f.046 .0 VDC.
DC
2- Thermal Resistance From^D=1J^/u²nction to Ambient
DC
0.001
0.04 _D=1/2
Sin(θ＝180)
Io
VR
t
D=t/T
VR=20V
T Tj=125℃
0.1
0.08
0.06
DC
0.04 D=1/2
0.5
10
0A
Io
0V
VR
t
D=t/T
VR=20V
T Tj=125℃
0.02
Sin(θ＝180)
0
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
0.02
Sin(θ＝180)
0
0
25
50
75
100 125
CASE TEMPARATURE:Tc(℃)
Derating Curve(Io-Tc)
2012-06
2012-11
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.