SCS521CS-30T5G Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – 100mA Surface Mount Schottky Barrier Rectifiers - 30V

WILLAS
FM120-M+
THRU
100mA_1.0S_Au_Sr_Ufa_Rc_Fe_ACM_Eo_Mun_Ot_US_Nc_Th_So_Ct_Htk_Oy_TTB_Ka_Yrr_Bie_Ar_RR_RIe_Ec_Rti_Rfi_Ee_Crs_TI-_FI3_E0_RV_{S -20V-} ^S₂₀^C_0V^S521CS-3_F⁰_M^T₁⁵₂^G_00-M
SOD-923_SOP_Dac_-1k₂a₃g₊e _PACKAGE
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
zE_•le_Loc_opt_wtrⁱi^mc_pa^iozl_wech_ebra^or_laoa^rsc^dste_,sr_hpis_iagt^ci_hc^ee.c_fu_fir_cv_iee_ns_cy.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• Hi1g00h0 surge capability.
10000
• Gu₁a₀₀rdTrai=n12g5℃for overvoltage protection₁.₀₀₀
• Ultra h_Taig₌₇h_5℃-speed switching.
• Sili¹c⁰on epitaxial planar chip, metal sil¹ic⁰⁰on junction.
100
Ta=125℃
Ta=75℃
f=1MHｚ
0.071(1.8)
0.056(1.4)
• Lead1 -free parts meet env^Tir^ao^=-n²⁵m^℃ental st₁a₀ ndards of
Ta=25℃
10
•
MIL-STD-19500
RoH^0.1S product for
/228 _Ta=25℃
packing code
suffix
"G"
1
Ha0l.0o1gen free product for packing code su₀f_.f₁ix "H"
Ta=-25℃
Mec _0.001 hanical data
0.01
•
0
Epoxy
:
100 200
UL94-V0
300 400 500
rated flame
600
retardant
0
FORWARD VOLTAGE：VF(mV)
• Case : Mo^Vld^F-e^IFd^Cp^HAla^RAs^Ct^Tic^ER,^ISS^TO^ICSD-123H
10
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
,
• Terminals :Plated terminals, solderable per MIL-STD-750
1
30
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
0.031(0.8) Typ.
0.040(1.0)
20
0.024(0.6)
0.031(0.8) Typ.
300
Method 2026
30
Ta=25℃
•
Po₂₉l₀arity
:
Indicated
by
cat^Ih^F=o¹⁰d^me^A
n=30pcs
band
25
• Mounting Position : Any
20
280
• Weight : Approximated 0.011 gram ₁₅
Ta=25℃
VR=10V
n=30pcs
20
19
Ta=25℃
18
Dimensions in inches and^f=(¹m^MHill^zimeters)
VR=0V
17
n=10pcs
16
15
270
14
MAXIMUM RATINGS AND E¹⁰LECTRICAL CHARACTERIST¹I³CS
AVE:2.017uA
Ratings at ²2⁶5⁰ ℃ ambient t^Ae^Vm^E:2p⁷e^0.2r^ma^Vture unless otherw⁵ise specified.
12
11
Single pha₂s₅e₀ half wave, 60Hz, resistive of inductive l₀oad.
10
AVE:17.34pF
For capacitive load, derate current by 20%
VF DISPERSION MAP
RATINGS
IR DISPERSION MAP
Ct DISPERSION MAP
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Re2c0urrent Peak Reverse Voltage
12
13
14
15
16
10VRRM
20
30
40
10 ⁵⁰
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
Ifsm
1cyc
Maximum DC¹⁵Blocking Voltage
8.3ms
Maximum Average Forward Rectified Current
10
VRMS
14
21
Ifsm
28
35
VDC
20
8.3m³s⁰8.3ms ⁴⁰
50
IO
5
1cyc
5
42
56
70
Ifsm
60
80 ^t 100
1.0
105
140
150
200
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
30
superimposed o5n rated load (JEDEC method)
Typical Thermal Resistance (N_AVo_Et_:e_3.92_0A)
Typical Junctio⁰n Capacitance (Note 1)
Operating Temperature Range
IFSM DISRESION MAP
Storage Temperature Range
RΘJA
0 CJ
1
TJ
10 _{-55 to +125}100
NUMBER OF CYCLES
TSTG^{IFSM-CYCLE CHARACTERISTICS}
40
0
120
1
10
100
TIME:t(ms)
-55 to +150
IFSM_--t₆C₅HA_tR_oAC₊T₁E₇R₅ISTICS
1000 ^{CHARACTERISTICS}
Maximum Forward Voltage at 1.0A DC ^Rth(j-a)
Maximum Average Reverse Current at @_RtT_h(A_j-=_c)25℃
Rated DC Blocking Voltage
@T A=125℃
0^S.1^{YMBOL FM120-MH FM130-MH FM140-MH F0M.1 150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH}
VF
0.08
IR
0.06
D=1/2
0.50
DC
0.70
0.08
0.5
0.06
10
0.85
0.9
0.92
100
NOTES:
Mounted on epoxy board
IM=10mA
IF=100mA
0.04
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2-
Thermal
Resistance
From
Juncti¹o^mn^s
time
to Ambient
0.02
300us
Sin(θ＝180)
0.04
D=1/2
DC
0.02
Sin(θ＝180)
10
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
0.1
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
2012-06
2012-11
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.