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SCS521CS-30T5G Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – 100mA Surface Mount Schottky Barrier Rectifiers - 30V
WILLAS
FM120-M+
THRU
100mA1.0SAuSrUfaRcFeACMEoMuOnUt NSTchSoCtHtkOyTTBKaYrrBiAerRRRIeEcRtiRfiEeCrsTIF- I3E0RVS -20V- 2S00CVS521CS-3F0MT152G00-M
SOD-923SOPDa-c1k2a3+ge PACKAGE
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
zApoppltiicmaizteiobnoasrd space.
Lo•• wHLoigwchupcrourwrereenrntltorcseascp, ahtiibfgiichlitaey,tffilioocwinefnocryw. ard voltage drop.
zF•eHaitguhrseusrge capability.
Ex•tGreumaredlryinsgmfaolrl osvuerrfvaocletamgeopurnottiencgtiotynp. e. (SOD-923)
• Ultra high-speed switching.
Lo•wSilVicFon epitaxial planar chip, metal silicon junction.
Hi•gLheraedli-afrbeielitpya. rts meet environmental standards of
WeMdIeL-cSlaTrDe-1th9a50t 0th/2e2m8 aterial of product
co•mRpoHliaSnpcroeduwcitthforRpoacHkSingrecoqdueirseumffixe"nGt"s.
PbM-HFearlceogehepnaafrncekeicapgraoedluidsct aafovtraapialcakbinleg code suffix "H"
RoHS product for packing code suffix ”G”
• Epoxy : UL94-V0 rated flame retardant
Halogen free product for packing code suffix “H”
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
zC•oPnoslatrrituyc: tIinodnicated by cathode band
Silicon epitaxial planar
• Mounting Position : Any
DEV•ICWEeiMghAt R: AKpIpNrGoxAimNaDteOd R0.D0E11RgINraGmINFORMATION
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
1
0.056(1.4)
SOD-923
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
1
2
Cathode
Anode
Dimensions in inches and (millimeters)
DevicMe AXIMUM RAMTaINrkGinSg AND ELECTSRhIiCppAiLngCHARACTERISTICS
RatinSgCsSa5t2215C℃S-3a0mT5bGient temperatureFunless otherwise s8p0e0ci0fi/eTda.pe&Reel
SizngAlebspohalusteehmalaf xwimavuem, 60raHtzin, gressi(sTtaiv=e2o5f°Cin)ductive load.
For capacitive load, Pdearraatemceutrerrent by 20%
Symbol
Limits
Unit
Reverse voltage (RDACT)INGS
SYMVBROL FM120-MH FM130-M3H0 FM140-MH FM150-MH FVM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
MarAkivnegrCaogdeerectifierd forward current
Io
12
13 100 14
15 mA16
18
10
115 120
MaxFimoruwmaRrdeccuurrrernetnPtesaukrRgeevperesaekV o(lt6ag0eHz・1cyc) VRIRFSMM 20
30 500 40
50 mA60
80
100
150
200
MaxJiumnucmtioRnMSteVmopltaegreature
VRMTSj
14
21 125 28
35 ℃42
56
70
105
140
MaxSimtourmagDeCteBmlocpkeinrgatVuorletage
VTDCstg 20
-4300 to +12450
50 ℃60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
PeazkEFloercwtarridcaSlucrgheaCraurcretentri8s.3ticms(Tsain=g2le5h°Calf)sine-wave IFSM
superimposed oPnarartaemd leoatedr(JEDEC methodS) ymbol
Min.
TypFicoarlwThaerdrmvapl Rltaesgiestance (Note 2)
VF
R-ΘJA
TypFicoarlwJuanrcdtiovnplCtaagpaecitance (Note 1)
VF
-CJ
OpeRraetvinegrsTeemcpuerrraetunrte Range
Storage Temperature Range
IR
TJ
-
TSTG
Electricalcharacteristiccurves(Ta=25OC)
Typ.
-
-
-
Max.
Unit
0.35
V
-505.t4o +125 V
10
µA
30
Conditions
IF=10mA 40
IF=20mA 120
VR=10-V65 to +175
-55 to +150
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
0.3
Maximum Average Reverse Current at
0A
@IoT A=25℃
IR
Rated DC Blocking Voltag0eV
0.2 DC
NOTES:
@VRT A=125℃
t
D=t/T
VR=15V
T Tj=125℃
0.50
0.3
0.2
DC
0.70
0.5
0A
Io
0V
VR 10
t
D=t/T
VR=15V
T Tj=125℃
0.85
0.9
0.92
1- Measured atD1=1M/2HZ and applied reverse voltage of 4.0 VDC.
D=1/2
2- Therma0l.1Resistance From Junction to Ambient
0.1
Sin(θ=180)
Sin(θ=180)
0
0
25
50
75 100 125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
0
0
25
50
75 100 125
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
2012-06
2012-11
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.