SCS520S Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – 0.2 Amp Surface Mount Schottky Barrier Rectifiers

WILLAS
SOD-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
SCS520STHRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
Typical Characteristics • Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current ca^Fp^oa^rb^wi^ali^rt^dy, lo^Cw^hafo^rar^cw^ta^errⁱd^stv^ico^sltage drop.
1000
• High surge capability.
0.146(3.7)
Reverse C^0.h¹³a⁰r⁽³a^.3c⁾teristics
1000
• Guardring for overvoltage protection.
• Ultra high-speed switching.
100
• Silicon epitaxial planar chip, metal silicon junction.
100
• Lead-free parts meet environmental standards of
Ta=100 ^oC
MIL-STD-19500 /228
• R¹⁰oHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
10
Mechanical data
1
• Epoxy : UL94-V0 rated flame retardant
Ta=25 ^oC
• Case : Molded plastic, SOD-123H
•
0.1
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
1
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
•_0.P₀₁olarity : Indicated by cathode band
0
100
200
300
400
500
600
700
800
• Mounting Position : Any
FORWARD VOLTAGE V (mV)
F
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE V (V)
R
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave_C,_a6_p0_aH_cz_it,_ar_ne_cs_eis_Ctiv_he_aro_af_ci_tn_ed_ru_isc_tt_ii_cv_se load.
Power Derating Curve
For capa¹c⁰⁰itive load, derate current by 20%
200
Ta=25℃
RATINGS
SYMBO^f=L^1MF^HM^z120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
12
13
14
15
16
18
10
115 120
Maximum ₃R₀ecurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
20
30 ₁₅₀ 40
50
60
VRMS
14
21
28
35
42
80
100
150
200 Vol
56
70
105
140 ^Vol
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Vol
Maximum ₁A₀verage Forward Rectified Current
IO
100
1.0
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
Am
Typical Thermal Resistance (Note 2)
3
RΘJA
50
40
℃/
Typical Junction Capacitance (Note 1)
CJ
120
PF
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
1
0
0
5
10
15
20
0
25
50
75
100
125
CHARAC_RT_EE_VR_EI_RS_ST_EIC_VOS_{LTAGE V (V)} SYMBOL FM120-MH FM130-MH FM140-MH FM150-AMMHBIFEMN1T6T0E-MPHEFRMA1T8U0R-EMHTF_aM1(1℃0)0-MH FM1150-MH FM1200-MH UN
R
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Vo
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAm
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.