SCS520S Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – 0.2 Amp Surface Mount Schottky Barrier Rectifiers

WILLAS
SOD-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
SCS520STHRU
FM1200-M+
Pb Free Product
Features
Schottk_•y_Bab_tca_hr_pri_re_or_ceD_si_so_dd_ee_{sign, excellent power dissipation offers}
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
FEATUR^opE^tiS^{mize board space.}
z
•
•
Low power loss, high efficiency.
H^Sig^mh^ac^lu^l r^sre^un^rt^fac^cap^ea^mbil^oit^uy,ⁿlo^tiw^ngfor^tyw^pa^erd
voltage
drop.
z ^{• H}Lⁱo^ghw^surgI_R^{e capability.}
z
z
•
•
•
G_Hu_ia_gr_hdr_ri_eng_liafo_br_io_liv_tyervoltage protection.
U_Plt_bra_-Fh_rig_eh_e-s_pp_ae_ced_kasw_gi_etc_ih_sin_ag._vailable
Silicon epitaxial planar chip, metal silicon
junction.
• LReoadH-Sfreperpoadrutscmt efoert epnavcirkoinnmgecnotadlestsaundffaixrd”sGo”f
• R^MHo^IaH^Ll-S^oSgp^Tr^eDoⁿd^-1u^fc^9rt^5ef⁰o^e0r p^p/2a^rc^2ok^8din^ug^cc^to^fd^oe^rs^pu^affi^cx^k"Gⁱⁿ"^{g code suffix “H”}
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SO_SD_O-_D5_-2₁3_23H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
MARKING:
• Term
B
inals
:Plate
d
termin
als,
solderable
per
MI
L-
,
STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
Maximum Ratings and Electrical Characteristics,
• Weight : Approximated 0.011 gram
Single
Diode
@Ta=25℃
MPAarXaImMeUteMr RATINGS AND ESLyEmCbToRl ICAL CHARACTERISTLICimSit
Unit
Ratings at 25℃ ambient temperature unless otherwise specified.
S^Din^Cgl^re^ep^vh^ea^rs^se^eh^va^olf ^lw^taa^gve^e, 60Hz, resistive of inductive loa^Vd^R.
30
V
For capacitive load, derate current by 20%
Mean rectifying current
RATINGS
I_O
200
mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
M_Pa_erk_ain_kg _fC_oo_rd_we_{ard surge current}
Maximum Recurrent Peak Reverse Voltage
I_FSM
12
13
14
15₁
16
VRRM
20
30
40
50
60
18
10
A ¹¹⁵
120
80
100
150
200 Volts
M_Pa_oxi_wm_eum_{r d}R_iM_ssS_iV_po_al_tta_ioge_n
VR_PM_DS
14
21
28
3₁5₅₀ 42
56
70
mW¹⁰⁵
140 ^Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Thermal resistance junction to ambient
Maximum Average Forward Rectified Current
RθJA
IO
667
1.0
℃/W
Amp
PJeauknFcotriwoanrdtSeumrgpe eCruarrteuntre8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
T^Syp^ti^oca^ral T^gh^eer^tm^ea^ml R^pe^es^ri^ast^ta^un^rc^ee (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFS^TM^j
R^TΘsJtAg
CJ
TJ
TSTG
-55 to +125
125
30
-55~+150 ₄₀
120
- 65 to +175
℃
℃
-55 to +150
Amp
℃/W
PF
℃
℃
E_Male_xic_mt_ur_mic_Fa_ol_rwR_ara_dt_Vi^Cn_oHltg_aAgs^ReA@_aCt ^T1T^E.0a^RA=^ISD2^TC5^IC℃^S
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average_PR_ae_rv_ae_mrse_eC_teu_rrrent at
Rated DC Blocking Voltage
@T A=25℃
@T A=125℃
Sym^IRbol
Min
Typ
Max Unit
0.5
10
Conditions
mAm
NOFToErSw: ard voltage
V_F
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2-RTehevremrasl Reecsiustrarnecne tFrom Junction to Ambient
I_R
0.6
V
1
μA
I_F=200mA
V_R=10V
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.