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RS401M Datasheet, PDF (2/2 Pages) Rectron Semiconductor – SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)
WILLAS
FM1
T
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
RATING
AND
CHARACTERISTIC
CURVES
(
RS401MPTaHcRkUaRgSe4o07uMt
)
line
Features
• Batch process design, excellent power dissipation offers
FIGb. e1t-tMeAr XreIMvUeMrsNeONle-RaEkPaEgTeITcIVuErFreOnRWt aAnRdD SthUeRrGmEaClUrReRsEisNtTance.
• Low profile surface mounted application in order to
300 optimize board space.
FIG. 2 - TYPICAL FORWARD CURRENT DSEORDAT-1IN2G3HCURVE
5
• Low power loss, high efficiency.
250• High current capability, low forward voltage drop.
8.3ms Single Half Sine-Wave
4
• High surge capability. (JEDEC Method)
200• Guardring for overvoltage protection.
3
• Ultra high-speed switching.
150• Silicon epitaxial planar chip, metal silicon junction.
0.146(3.7)
0.130(3.3)
100•
Lead-free parts meet
MIL-STD-19500 /228
environmental
standards
of
2
Single Phase Half Wave
60Hz Indutive or
• RoHS product for packing code suffix "G"
50 Halogen free product for packing code suffix "H"
Resistive Load
1
100
150
Mechanical data
0
0
•1Epoxy 2: UL94-V0 ra5ted f1la0me re2ta0rdant 50 100
0
NUMBER OF CYCLES AT 60Hz
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
50
CASE TEMPERATURE, ( )
0.031(0.8) Typ.
FM1
Pb Fre
0.012(0.3) Ty
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) T
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
100
MAXIMUM RATINGS AND ELECTRICAL CH1A0RACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
TJ = 25
TJ = 100
10
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximu1m DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM11.030-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM115
12
13
14
15
16
VRRM
20
30
40
50
60
Pulse Width = 300us
1% Duty VCyRcMleS
14
21
28
35
42
VDC
20
.310
40
50
60
18
10
11
80
100
15
56
70
10
80
100
15
IO
TJ = 25 1.0
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superim.1posed on rated load (JEDEC method)
Typical T.h6ermal R.8esistan1c.e0 (Note12.2)
1.4
1.6 RΘ1J.8A 2.0
INSTANTANEOUS FORWARD VOLTAGE, (V)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
30
.01
0
20
40 60
80 40100 120 140
PERCENT OF RATED PEAK REV1E2R0SE VOLTAGE, ( % )
-55 to +125
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
2012.10
CHARACTERISTICS
WILLAS ELECTRONIC CORP.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9