RS401M Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

WILLAS
RS401M
THRU
FM1
TH
1.0A SURFACE_SM_INO_GU_LN_ET_-PS_HCH_AO_ST_ET_GKY_LAB_SA_SRR_PIE_AR_SSR_IE_VC_AT_TIF_EI_DERS -20V- 2^R00^SV^407M
SILICON BRIDGE RECTI^SF^OIE^DR^{-123+ PACKAGE}
FM12
Pb Free
Feat^Vu^Or^Le^TAs^{GE RANGE 50 to 1000 Volts CURRENT 4.0 PAmacpekrae ge outline}
• Batch process design, excellent power dissipation offers
FEAbTeUttRerErSeverse leakage current and thermal resistance.
* I•deLaol wforpprroinfitleedscuirrcfuaitcbeoamrdounted application in order to
* Suorgpetiomveizrleoabdoratridngs: p1a50cea.mperes peak
* M_• o_Lu_on_wtin_pg_op_wos_eit_rio_ln_o:_sA_sn_,y_{high efficiency.}
M^•E^HCⁱH^gA^h N^cuIC^rrA^eL^ntD^cA^aT^pA^{ability, low forward voltage drop.}
* U^•L^Hliⁱs^gte^hd^st^uhe^rgr^eec^co^agn^pi^aze^bd^ilic^to^ym^. ponent directory, file #E195711
* E^•p^Gox^uy^a: ^rD^de^rvⁱⁿic^ge ^fh^oa^rs^oU^vL^erfl^va^om^lm^taa^gb^eilit^py^rc^ol^ta^es^csi^tfⁱi^ocaⁿt^.ion 94V-O
P^• b^U-F^{l t}r^re^ae^hp^{i g}a^hc^-k^sa^pg^ee^{e d}is^sa^wvⁱa^{t c}il^haⁱbⁿl^ge^.
R^• o^SH^ilS^icp^orⁿo^edu^pc^itt^af^xoⁱr^ap^l a^pc^lakiⁿn^ag^rc^co^hdⁱe^p,s^muf^efi^tx^a"^lG^s"^{ilicon junction.}
H^• a^Llo^eg^ae^dn^-ff^rr^ee^ee^pp^aro^rtd^su^mct^efo^er^{t e}paⁿc^vk^irin^og^nmco^edⁿe^tas^lu^sff^ti^axⁿ"H^da" ^{rds of}
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.995 (25.3)
.983 (24.7)
SOD-123H
0.146(3.7)
0.130(3.3)
RS-4M
0.012(0.3) Typ.
.189 (4.8)
.173 (4.4)
.150 (3.8)
.134 (3.4)
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
MA_• X_TI_eM_rU_mM_inR_aA_lsTI_:N_PG_laS_teA_dN_tD_e
r^Em^LEin^Ca^Tl^Rs,^ICs^Ao^Lld^Ce^Hra^Ab^Rl^Ae^Cp^Te^Er^RM^ISIL^T-^ICS^ST
,
D-750
Ratings at 25 ^oC am_Mbie_en_tt_ht_oem_dp₂e₀ra₂tu₆re unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
Fo^•r c^Pa^opa^laci^rt^itv^ye ^:lo^Iaⁿd^d, ⁱd^ce^ara^tete^dc^bur^yre^cn^at b^thy ^o2^d0%^e.^band
.057 (1.45)
.041 (1.05)
.083 (2.1)
.069 (1.7)
.043 (1.1)
.035 (0.9)
0.031(0.8) Typ.
.114 (2.9)
.098 (2.5)
.031 (0.8)
.023 (0.6)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ
.303 (7.7) .303 (7.7) .303 (7.7)
.287 (7.3) .287 (7.3) .2D87i(m7.3e) nsions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25^oC unless otherwise noted)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL RS401M RS402M RS403M RS404M RS405M RS406M RS407M UNITS
RatiMnagxsimaumt 2R5e℃ curreantmPbeaieknRtetveermsepVeorlatatguere unless otherwise specViRfRieMd.
50
100
200
400
600
800 1000 Volts
SingMlaexipmhumasReMhSaBlrfidwgeaIvnepu,t6V0olHtazge, resistive of inductive load. VRMS
35
70
140
280
420
560
700 Volts
For^Mc^aa^xp^ima^uc^miti^Dv^Ce^Blo^loa^ckdⁱⁿ,^gd^Ve^or^la^tat^ge^e current by 20%
Maximum Average Forward Output Current at TC = 100^oC
Peak Forward Surge Cur^Rre^Ant^T8^I.^N3 m^Gs^Ssingle half sine-wave
MarksiunpgerCimopdoseed on rated load (JEDEC method)
VDC
50
100
200
400
600
800 1000 Volts
IO
4.0
Amps
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-
IFSM
150
Amps
12
13
14
15
16
18
10
115
Maxi^Om^pu^erm^atinR^ge^Tc^eu^mr^pr^ee^rn^att^uP^ree^Ra^ak^ngR^eeverse Voltage
Maxi^Sm^tou^ram^geR^TM^emS^peV^rao^tult^ra^e g^Re^ange
Typical Junction Capacitance (Note)
Maximum DC Blocking Voltage
VRRM ^TJ 20
30
40 ^{-55 to}5⁺0¹⁵⁰
60
VRMS ^TSTG14
21
28 ^{-55 to}3⁺5¹⁵⁰
42
CJ
40
VDC
20
30
40
50
60
80
0 _C100
150
56
0 _{C 70}
105
pF
80
100
150
MaExLimECuTmRIACAvLerCaHgAeRFAoCrTwERaIrSdTRICeSc(tAiftiTeAd=C25u^orCreunnletss otherwise notedI)O
1.0
CHARACTERISTICS
Peak Forward Surge Current 8.3 ms single half sine-wave
Maximum Forward Voltage Drop per Bridgeat
supe_Eri_lm_emp_eo_ns_te_ad_{t 4}o_.0n_Ara_Dt_Ced load (JEDEC method)
SYMBOL
IFSM
VF
RS401M RS402M RS403M RS404M RS405M RS406M RS407M UNITS
30
1.1
Volts
Typic^Ma^al^xT^imh^ue^mrm^Rea^vl^eR^rse^es^Cis^urt^ra^enⁿc^t e^at (^RN^ao^tet^de 2)
Typic^Da^cl^BJ^lou^cn^kcⁱⁿt^gio^Vn^olC^taga^ep^pa^ec^rit^ea^len^mc^ee^nt(Note 1)
@TA = 25^oC _RΘJA
IR
@TC = 100^oC _CJ
5
40
uAmps
0.2
120
mAmps
Op^Ne^Ora^Tt^Ein^Sg^: T^Me^em^asp^ue^rer^da^atu^{t 1}re^MHR^Za^an^ndge^{applied reverse voltage of 4.0 volts} TJ
-55 to +125
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
2012.10
CHARACTERISTICS
WILLAS ELECTRONIC CORP.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-M
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9