MMDL914 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode

WILLAS
200mA Surface Mount Switching Diode - 100V
1.0A SURFACE MOUNT SCHOTTKY_SB_OA_DRR_-3IE₂R₃ R_PE_aC_cT_kI_aF_gIE_eRS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
THRU
MMDL9_F1_M4_1200-M+
Pb Free Product
Features
• B⁸²a⁰tc^Ωh process design, excellent power dissipation offers
Package outline
+10 V
better reverse leakage current and thermal resistance.
•
Low
2k
profile surface
mounted
applicat⁰io^.1n^µi^Fn
order
to
optimize bo1a00rdµsHpace^IF.
tr
tp
t
SOD-123H
IF
• Low po₀w_.1e_µr _Floss, high efficiency.
10%
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
trr
t
0.012(0.3) Typ.
• High surge capability. _DUT
50 Ω^{• G}OU^uT^aP^rU^dT^{ring for overvoltage protection.} 50 Ω INPUT
90%
•_PUU_Ll_Str_Ea high-speed switching.
SAMPLING
GE^•NE^SRⁱA^liT^cO^oR^{n epitaxial planar chip, metal sil}O^icS^oCⁿIL^jL^uOⁿS^cC^tO^ioPⁿE^.
VR
• Lead-free parts meet environmental standards of
INPUT SIGNAL
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
IR
iR(RE_00..C0057)61=₍₍₁₁1_..48.₎₎0 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1.0 mA)
Halogen free product for packing code suffix "H"
Mechanical dNaotteas: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I _F ) of 10mA.
• Epoxy : UL94-V0 ra^Nte^od^tef^sla^: m^2.e^Inr^pe^ut^ta^prd^ua^lsn^et ^{is adjusted so I} R(peak) ^{is equal to 10mA.}
• Case : Molded plast^Nic^o,^teS^sO^{: 3}D^.-^t1^p2^»3^tH^rr
0.031(0.8) Typ.
,
• Terminals :Plated te_Fr_im_gi_un_ra_els,₁s_.o_Rld_ee_cra_ob_vle_ep_ryer _TM_iI_mL-_eST_ED_q-_u75_iv0_{alent Test Circuit}
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
100
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T A = 150°C
Ratings at 25℃ ambient tem^Tpe^Ar⁼a⁸tu^5°r^Ce unless otherwise_Tsp_{A =}ec_–i₄fi₀e_°d_C.
1.0
Single phase₁₀half wave, 60Hz, resistive of inductive load.
T _A = 125°C
For capacitive load, derate current by 20%
RATINGS
Marking Code
1.0
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
T _A = 85°C
T A =^SY25^M°^BC^{OL FM120-MH FM130-MH 0F.M1 140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH}
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
6T0A = 55°C 80
100
150
200 V
0.01
VRMS
14
21
28
35
42
56
70
105
140 ^V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^V
T _A = 25°C
Maximum Ave0r.a1ge Forward Rectified Current
IO
0.001
1.0
A
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
Peak Forward Surge Current _V8.3_{F ,}m_Fs_Osi_Rng_Wle_Ah_Ra_Dlf s_Vin_Oe-_Lw_Ta_Av_Ge _{E (IVFOSMLTS)}
superimposed on rated load (J_FED_igE_uC _rm_eeth₂o_.d)_{Forward Voltage}
Typical Thermal Resistance (Note 2)
RΘJA
V _R , REVER³S⁰E VOLTAGE (VOLTS)
A
Figure 3.₄₀Leakage Current
℃
Typical Junction Capacitance (Note 1)
CJ
120
Operating Temperature Range
0.68
TJ
-55 to +125
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
0.64
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
0.60
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
IR
0.5
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage ⁰o^.f⁵⁶4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.52
0
0.2
0.4
0.6
0.8
V _R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.