MMDL914 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode

WILLAS
200mA Surface Mount Switching Diode - 100V
1.0A SURFACE MOUNT SCHOTTKY_SB_OAR_DR_-3IE₂R₃ R_PE_aC_cT_kI_aF_gIE_eRS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
THRU
MMDL9_F1_M4_1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
FET^• U^HiR^ghE^{current capability, low forward voltage drop.}
• High surge capability.
z_•P_Gb_u-_aF_rr_de_re_inp_ga_foc_rk_oa_vg_ee_rvi_os_lta_av_ga_eil_pa_rb_ol_te_ection.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•RUoltHraShpigrohd-supcetefdorspwaitcckhiinngg.code suffix ”G”
•_HS_ail_li_oc_go_en_nep_fri_eta_exi_pa_rl_op_dla_un_ca_t r_foc_rh_pip_a,_cm_kie_nt_gal_cs_oil_dic_eo_sn_uju_ffn_ixct_“i_Hon_” .
0.071(1.8)
0.056(1.4)
z •_MLe_oa_isd_t-_ufr_re_ee_Sp_ea_nrt_ss_itm_ive_ie_tyt e_Ln_ev_vir_eo_ln₁mental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
ORDE_HR_aIN_logG_enIN_frF_eO_e R_prM_odA_uT_ctIO_foN_{r packing code suffix "H"}
D^Mev^eic^ce^{hanical data}Package
Shipping
MM^• D^EL^p9^o1^x4^{y : UL94-V0 rated} S^flaO^mD^e-3^r2^e3^tardant 3000/Tape&Reel
SOD- 323
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
MAX_•IM_TeU_rM_mi
n^Ra^Als^T:^IP^Nla^Gte^Sd
te
rminals,
solderab
le
per
MIL-STD-75
,
0
RatinMg ethod 2026
Symbol
Value
R_•ev_Pe_ors_lae_rV_ito_yl_:ta_Ig_ne_{dicated by cathode band}
V_R
100
Polarity: Color band denotes cathode end
0.031(0.8) Typ.
0.031(0.8) Typ.
1
2
Unit
CATHODE
ANODE
Vdc _{Dimensions in inches and (millimeters)}
Forward Current
• Mounting Position : Any
I_F
200
mAdc
Peak Forward Surge Current
I _FM(surge)
500
mAdc
• Weight : Approximated 0.011 gram
THERMAL CHARACTERISTICS
Cha^Mra^Ac^Xte^IMris^Uti^Mc ^{RATINGS AND ELE}S^Cym^Tb^Ro^Il^{CAL CH}M^ARax^ACTERISU^Tn^ICit^S
Rating_Ts_otat_l 2_D5_e℃_viceam_Dib_si_se_in_pt_ate_iom_np_Fe_Rra_-5tu_Bre_oau_rn_dle_,*ss otherwise sp_Pe_Dcified.
200
Single_Tp_Ah₌a₂s₅e_°h_Calf wave, 60Hz, resistive of inductive load.
For ca_Dp_ea_rc_ai_teive_abloa_vd_e,₂d₅e_°r_Cate current by 20%
1.57
mW
mW/°C
Thermal Resista_Rnc_Ae_TIJ_Nu_Gnc_Stion to Ambient
Markin^Jg^uCⁿo^cd^tie^{on and Storage Temperature}
SYMB^RO^θL^JAFM120-MH FM1⁶3³0⁵-MH FM140-MH^°CFM^/W150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
T _J , T _{stg 12}
1¹3⁵⁰
14 ^°C15
16
18
10
115 120
Ma_**x_Fim_R-u₄ m_MinR_ime_uc_mur_Pr_ae_dnt Peak Reverse Voltage
Maximum RMS Voltage
Ma^Dxi^Em^Vum^ICD^EC B^Mlo^Ack^Rin^Kg ^IV^No^Gltage
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
80
100
150
200 V
56
70
105
140 ^V
80
100
150
200 ^V
Maxim^Mum^MA^Dv^Le⁹r¹a⁴ge⁼F⁵o^Drward Rectified Current
IO
1.0
A
Pe^Eak^LF^Eo^Crw^Ta^Rrd^ICSu^Arg^Le ^CCu^Hrr^Aen^Rt 8^A.3^Cm^Ts^Es^Rin^Ig^Sle^Th^ICalf^Ssi⁽n^Te-Aw⁼av²e^5°C _I^u_Fⁿ_S^l_M^{ess otherwise noted)}
30
A
superimposed on_Cr_ha_ate_rd_al_coa_ted_r(_iJ_sE_tD_icEC method)
Symbol Min Max Unit
Ty_Opic_Fa_Fl _CTh_He_Arm_Ra_Al R_Ce_Ts_Eis_Rta_In_Sc_Te_IC(N_Sote 2)
Typical Junction Capacitance (Note 1)
RΘJA
CJ
40
℃
120
Operatin^Rg^eT^ve^em^rsp^eer^Ba^rt^eu^are^kdR^oa^wngⁿe^Voltage
Storage^(IT^Rem⁼ p¹e⁰ra⁰tu^µr^Ae^dR^ca⁾ nge
TJ
TSTG
V _(BR)
-5₁5₀t₀o +125 _—
Vdc
-55 to +150
- 65 to +175
Reverse Voltage Leakage Current
I_R
(V _R = 20Vd_Cc_H) _{ARACTERISTICS}
Maximu⁽m^VFRo⁼rw⁷a⁵rd^VdV^co⁾ltage at 1.0A DC
SYMBOL FM120-MH FM^—130-MH FM²1⁵40-MH FⁿM^A15^d0^c-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
— _0.505.0
µAdc _0.70
0.85
0.9
0.92 V
Maximu^Dm^ioA^dv^eer^Va^og^le^taR^ge^everse Current at @T A=25℃
Rated D⁽C^V B^Rl⁼o⁰ck^, i^fng⁼¹V^.o⁰l^Mta^Hge^{z )}
@T A=125℃
IR
C_T
—
4.0
pF
0.5
10
m
Forward Voltage
NOTES: _{(I F = 10 mAdc)}
V_F
—
1.0
Vdc
1- Measu_Rre_ed_veat_rs1_eM_RH_eZ_ca_on_vd_ea_rypp_Tlie_imd _ereverse voltage of 4.0 VDC.
2- Therm₍a_Il_FR₌es_I i_Rst₌an₁c₀e F_mro_Am_dcJu₎n₍c_Fti_io_gn_urto_e A₁m₎ bient
t _rr
—
4.0
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.