MMDL6050 Datasheet, PDF (2/3 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – High Speed Switching Diodes

WILLAS
200mA Surface Mount Switching Diode - 70V
1.0A SURFACE MOUNT SCHOTTKY_SB_OA_DR_-R₃IE₂₃R R_PE_aC_ckTI_aF_gIE_eRS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
MMDL6_F0_M50₁^T₂^H₀^R₀^U_-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
+10^bV^{etter8r2e0veΩrse 2le.0akkage current and thermal resistance.}
• Low profile surface mounted application in order to
optimize board space.
• Low power los₁s₀,₀h_µi_Hgh effiIc_Fiency.
0.1µF
t_r
• High current capability, low forward voltage drop.
Package outline
t_p
t
10%
SOD-123H
I_F
t ^0.146(3.7)
0.130(3._r3_r )
t
0.012(0.3) Typ.
• High surge capability.
• Guardring fo0r.1ovµeFrvoltage pr_Do_Ute_Tction.
90%
• U5lt0raΩhOiUgThP-UspTeed switching.
50 Ω INPUT
• Silic^Po^Un^Le^Sp^Eitaxial planar chip, metal silico^Sn^Aj^Mu^Pn^Lc^INti^Gon.
INPUT SIGNAL
I_R
•
GENERATOR
Lead-free parts
meet
environmental
OSCILLOSCOPE
standards of
V_R
MIL-STD-19500 /228
i _R(REC) = 1.0 m0A.071(1.8)
0.056(1.4)
OUTPUT PULSE
(I _F = I _R = 10 mA; MEASURED
at i _R(REC) = 1.0 mA)
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical d^Na^ott^ea^{s: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.}
•
Epoxy
:
UL94-V0
Notes: 2. Input pulse is
ra_Nt_oe_td_esf_:la₃m_{. t}e_p
r_»e_tt
ar
rr
da
n
t
adjusted
so
I
R(peak)
is
equal
to
10mA.
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
• Terminals :Plated t_Fe_ir_gm_uin_ra_els₁, _.so_Rld_ee_cr_oab_vl_ee_rp_yer_TM_imIL_e-S_ET_qD_u-7_i5_v0_{alent Test Circuit}
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
Dimensions in inches and (millimeters)
TYPICAL CHARACTERISTICS
• W₁e₀i₀ght : Approximated 0.011 gram
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient tem^Tp^Ae⁼ra⁸⁵tu^°Cre unless otherwiseTs_Ap=e–c4i0fi°eCd.
1.0
Single phase¹⁰half wave, 60Hz, resistive of inductive load.
T _A = 150°C
T A = 125°C
For capacitive load, derate current by 20%
RATINGS
T _A = 85°C
T _A =S2Y5M°CBOL FM120-MH FM130-MH^0.F¹M140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code_1.0
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
12
13
14
15
16
18
10
115 120
VRRM
20
30 _0.01 40
50
T_6A0= 55°C ₈₀
100
150
200
VRMS
14
21
28
35
42
56
70
105
140 ^V
Maximum DC Blocking Voltage
VDC
20
30
40
50
T⁶_A⁰= 25°C ⁸⁰
100
150
200 ^V
Maximum Av⁰e^.r¹a₀g_.2e Forward_0.R₄ ectified C₀u_.6rrent
0.8
IO _1.0
0.001
1.2
0
10
20^1.0
30
40
50
Peak Forward Surge CurrentV8.F3, mFsOsRinWglAe RhaDlf VsiOneL-TwAavGeE (V_IFO_SL_MTS)
superimposed on rated load (JFEiDgEuCreme2th.odF) orward Voltage
Typical Thermal Resistance (Note 2)
RΘJA
V _R , REVERS₃E₀ VOLTAGE (VOLTS)
Figure 3. Leakage Current
40
℃
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
0.68
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
0.64
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=₀2_.65₀℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
m
10
NOTES:
0.56
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.52
0.2
0.4
0.6
0.8
1.0
1.2
V _R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.