MMDL6050 Datasheet, PDF (1/3 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – High Speed Switching Diodes

WILLAS
FM120-M+
THRU
200mA Surface Mount Switching Diode - 70V
1.0A SURFACE MOUNT SCHOTTKY_SB_OA_DR_-R₃₂IE₃R_PR_aE_cC_kT_aIF_gI_eERS -20V- 200V
MMDL60_F5_M0_1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
•_FL_Eo_Tw_Up_Rro_Efile surface mounted application in order to
optimize board space.
SOD-123H
• L_zowPpbo-Fwreer lpoascsk, ahgigehisefafivcaieilanbclye.
• Hig_Rh_oc_Hu_Srre_pn_rot_dc_ua_cp_ta_fob_ril_pit_ay_c, _klo_inw_g f_co_or_dw_ea_sr_ud_ffv_ixol_”t_Ga_”ge drop.
• Hig_Hh_as_lu_ogrg_ee_n c_fra_ep_ea_pb_ri_oli_dt_uy._{ct for packing code suffix “H”}
• G_zua_Mr_odr_isin_tg_urf_eor_So_ev_ne_sr_iv_to_ivlt_ia_tyge_Lep_vro_et_le₁ction.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
• LM_OeIaL_rdd-S-_efTr_reD_ie_n-1pg9a5rIt0_ns0m_f/o2e2re8_mt e_anv_ti_ir_oon_nmental standards of
•
RoHS product for packing code suffix "G"
Halogen^Df^er^veⁱe^ceproduct for p^Mac^ak^ri^knⁱⁿg^gcode suffix
"H"^Shipping
Me^Mc^Mh^Da^L6n⁰⁵i⁰cal data ^5A
3000/Tape&Reel
• E_Mp_Aox_Xy_IM: U_UL_M94_R-V_A0_Tr_Ia_Nte_Gd_Sflame retardant
• Case : Molded plastic, SOD-123H
Rating
Symbol _,
• Term_Ri_en_va_els_rs:_eP_Vla_ot_le_tad_gt_eerminals, solderable per MIL-STD_V-_R750
Forward^MC^etu^hrr^oe^dn²t ⁰²⁶
I_F
• Pola_Pri_et_ay_k: _FIn_od_rwic_aa_rt_ded_Sub_ry_geca_Cth_uo_rrd_ee_ntband
I _FM(surge)
SOD-323
Polarity: Color band denotes cathode end
1
CATHODE
2
ANODE
0.040(1.0)
0.024(0.6)
Va l u e^{0.031(0.8) Typ.} Unit
0.031(0.8) Typ.
70
Vdc
200
mAdc
500
D_mim_Aen_ds_cions in inches and (millimeters)
• M_THou_En_Rti_Mng_ALP_Cos_Hit_Aio_Rn_A:_CA_Tn_Ey _RISTICS
• Weight : Ap_Cp_hro_arx_aim_cta_et_re_id_st0_ic.011 gram
Symbol
Max
Unit
Tot_Mal _AD_Xev_Ii_Mce_UD_Miss_Ripa_Ati_Ton_INF_GR-_S5 B_Ao_Nar_Dd,*_ELECTRICAP_{LD CHARACT}20_E0_RISTICS mW
Ratings at 25^TD℃_e^A_r=a_am_t2e5b_a°i^Ce_bn_ot_vt_eem₂₅p_°e_Crature unless otherwise specified.
1.57
mW/°C
Single phase _Th_ha_elf_rmwa_av_l e_R,_e6_s0_isH_taz_n, _cre_es_Jis_ut_niv_ce_tioo_nf in_todu_Ac_mti_bve_ienlo_tad.
For capacitive_Julo_na_cd_ti,_od_ne_ara_nt_de_Sc_tu_or_rr_ae_gn_et b_Ty_em20_p%_erature
R _θJA
T _J , T _stg
635
150
°C/W
°C
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Co^**d^Fe^{R-4 Minimum Pad}
12
13
14
15
16
18
10
115 120
Maximum R_De_Ecu_Vrr_Ie_Cn_Et Pe_Mak_AR_Re_Kve_Ir_Nse_GVoltage
Maximum RMS Voltage
MMDL6050 = 5A
Maximum DC Blocking Voltage
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
80
100
150
200
56
70
105
140
80
100
150
200
Maximum A^Ev^Le^Era^Cge^TRFo^ICrw^Aar^Ld ^CRe^Hc^Atif^Ried^AC^Cu^Trr^Ee^Rnt^{ISTICS (T A =}IO^{25°C unless otherwise noted)}
1.0
Characteristic
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposOedFoFnCraHteAdRloAadC(TJEEDREISCTmICethSod)
IFSM
Symbol Min Max
Unit
30
Typical Thermal_RR_ee_vs_eis_rt_sa_enc_Be_re(N_ao_kt_de_o2_w)_{n Voltage (I (BR) = 1}R₀₀ΘJ_µA_Adc)
Typical Junction_RC_ea_vp_ea_rc_si_eta_Vnc_oe_lta(N_go_ete_Le1_a) _{kage Current} CJ
Operating Temp₍e_Vra_Rtu₌re₅R₀a_Vn_dg_ce₎
TJ
Storage Temper_Fa_otu_rr_we_aR_ra_dn_Vg_oe_ltage
TSTG
V _(BR)
70
-5^{I R}5 to +125^—
V_F
—
Vdc ⁴⁰
120
0.1 µAdc
-55 to +150
Vd^-c^{65 to +175}
(I _F = 1.0 mAdc)
0.55 0.7
(I _F =^C1^H0^A0^Rm^ACA^Td^Ec^R) ^ISTICS
SYMBOL FM120-MH FM130-MH₀F_.M₈₅140-MH ₁F_.M₁150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forwa_Rrd_evV_eo_rlt_sa_ege_Ra_et_c1_o._v0_eA_ryD_TC_ime
VF
Maximum Avera₍g_Ie_{F =}Re_I v_Re₌rs₁e₀C_mur_Are_dn_ct_, a_It_R(R@_ECT_{) =}A=₁2_.05℃_{mAdc) (FIRigure 1)}
0.50
t _rr
—
0.70
4.0
ns _0.5
0.85
0.9
0.92
Rated DC BlockCinagpVaocltiatagnece (V _R = 0 V@) T A=125℃
C
—
2.5
pF ¹⁰
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.