MMBTA5XLT1 Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – Driver Transistors

WILLAS
FM120-M+
MMBTA5xLT^T1^HRU
Driver Transistors _{1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
o_Ep_Lt_Eim_Ciz_Te_Rb_ICoa_Ar_Ld s_Cp_Ha_Ace_R._{ACTERISTICS (T A = 25°C unless otherwise noted) (Continued)}
• Low power loss, high efficiency.
•
High
current
capability,
Characteristic
low forward voltage
drop.
Symbol
Min
• H^Oi^Ngh^Cs^Hur^Ag^Re ^Aca^Cp^Ta^Ebi^Rlit^Iy^S.^TICS
• Guardri^Dng^Cf^Co^ur ^ro^revⁿe^tr^Gvo^alⁱtⁿage protection.
hFE
0.146(3.7)
Max ^0.130(3.3)Unit
—
0.012(0.3) Typ.
• Ultra hig^(IhC-s⁼p^–e¹e⁰d^ms^Aw^dit^cc^, h^VinCgE ⁼. ^{–1.0 Vdc)}
• Silicon e(IpCit=a–x1ia0l0pmlaAndacr, cVhCiEp=, m–1e.t0aVl sdicli)con junction.
100
—
100
—
0.071(1.8)
0.056(1.4)
• Lead-freCeolpleacrttosr–mEemeitternSvairtounramtioenntVaolltsatgaendards of
MIL-STD_(I -_C1₌9_–5₁0₀0₀/_m2_A28_{dc, I B = –10mAdc)}
• RoHS pr_Bod_asu_ec_–t _Efo_mr p_itta_ec_rk_Oin_ng_Vc_oo_ld_tae_gs_euffix "G"
Halogen free product for packing code suffix "H"
M
e
c
h
(I
a
n^{C =}i
–100mAdc, V
cal data
CE
=
–1.0Vdc)
VCE(sat)
V BE(on)
—
–0.25
Vdc
—
–1.2
Vdc
• E^Sp^Mo^Axy^L:^LU^–L^S9^IG4-^NV^A0 ^Lra^Cte^Hd^Afl^Ram^Ae^Cr^Te^Eta^Rr^Id^Sa^Tn^It^CS
•
Case
:
Current
Molded
–Gain–Bandwidth Product(4)
plastic, SOD-123H
(V CE = –1.0 Vdc, I C = –100mAdc, f = 100 MHz)
f_T
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y _{4. f T is definMedetahsotdhe20fr2eq6uency at which |h f e | extrapolates to unity.}
• Polarity : Indicated by cathode band
50 0.031(0.8) Typ.
—
MHz
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
r _{• MOouRnDtiEnRg IPNoGsitIiNoFnO: ARnMyATION}
a _{• WeighDte:vAicpeproximated 0M.0a1r1kignrgam}
Shipping
MMB_MTA_A5_X5L_IMT1_{UM RATIN}2H_{GS AND EL}3_E00_C0_T/T_Rap_Ie_C&_AR_Le_Cel_{HARACTERISTICS}
in _{Ratings at 2}M₅M_℃BT_aA_m5_b6_ieL_nT_t1_temperatur2_eG_uM_{nless otherwi}3_s0_e0_s0_p/T_ea_cp_ife_ie&_d.Reel
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
lim ^RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code _{TURN−ON TIME}
Maximum Recurrent Peak Revers−e1.0VoVltage
Maximum RMS Voltage
12
13
V_{CC VRRM}
20
30
T¹U⁴RN−OFF¹T⁵IME
40
50
16
6^+V0BB
18
10
80 ^VCC100
115 120
150
200 Volts
+40 V
VRMS
14
21
28
35
42
56
7⁺0^{40 V}
105
140 ^Volts
e _{Maximum DC5.B0lmoscking Voltage}
100
r _{Maxim+u1m0 VAverage Forward Rectified Current}
R_L^VDC
20
30
40
50
60
80
100
100
R_L
150
200 ^Volts
IO
OUTPUT
1.0
OUTPUT
Amp
Peak Forward Surge Curren^Vt i8n .3 ms single h^RaBlf sine-wave
P _{sTuyppeicriam0l pTohseetrrdm=oa3nl.0Rranetsesdisltoaandce(JE(5ND.0oEtmeCF2m)ethod)}
IFSM
* C_S t 6.0 pF
RΘJA
V_in
30 ^RB
5.0 mF ₄₀
* C_S t 6.0 pF
Amp
℃/W
Typical Junction Capacitance (Note 1)¹⁰⁰
CJ
12¹0⁰⁰
PF
Operating Temperature Range
TJ
-55 to +125 _{5.0 ms}
-55 to +150
℃
Storage Temperature Range
TSTG
t_r = 3.0 ns
- 65 to +175
℃
CHA_*R_TA_otC_aT_l E_SR_huIS_nT_tI_CC_aS_{pacitance of T}S_eY_sM_{t J}B_iO_g L_anF_dM1_C2_o0-_nM_nH_ecF_tM_o1_r3_s0_F-M_oH_{r P}FM_N1_P40_T-M_esH_t F_CM_ir1_c5_u0-_itM_sH_{, R}FM_ev1_e60_rs-M_eH_AF_llM_V1_o80_lt-_aM_gH_eF_PM_o1_l1_a0_r0_it-_iM_eH_s FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃ Figu_IRre 1. Switching Time Test Circuits
0.5
Rated DC Blocking Voltage
@T A=125℃
10
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.