MMBTA5XLT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – Driver Transistors

WILLAS
FM120-M+
MMBTA5xLT^T1^HRU
Driver Transistors _{1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
PNP Silicon • Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
•^ƽHi^Wgh^ecu^dr^ere^cn^lat c^reap^ta^hb^ai^tlit^ty^h,^elo^mw ^afo^tr^ew^ria^ar^ld^ov^fo^plta^rog^de^ud^cro^t p.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• Hi_cg_oh _msu_prg_liae_nc_ca_epa_wbi_il_ti_hty._{RoHS requirements.}
• Gu_Pa_brd_-Fri_rn_eg_efo_pr_ao_cv_ke_arv_go_elta_isge_ap_vr_ao_it_le_ac_bti_lo_en.
• Ul_Rtra_oHhi_Sgh_p-s_rop_dee_ud_cts_fw_oi_rtc_ph_ain_cg_k._{ing code suffix ”G”}
• Silicon epitaxial planar chip, metal silicon junction.
•
Halogen free product for packing code suffix
Lead-free parts meet environmental standards of
“H”
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
•MRAoXHISMpUroMduRctAfTorINpaGcSking code suffix "G"
Halogen free product for packing code suffix "H" Value
Mecha^Rn^atiⁱⁿc^gal data
Symbol MMBTA55 MMBTA56 Unit
SOT–23_0.040(1.0)
• Ep^Co^ox^lly^ec:^tU^orL^–9^E4^m-ⁱV^tte0^rr^Va^ote^ltad^gf^elame reta^Vrd^Ca^EOnt
–60 –80
Vdc
• CaCsoelle:cMtoor–ldBeadseplVaoslttaicg,eSOD-123HV CBO
–60 –80 Vdc
,
• TeErmiitntearl–sB:aPsleatVeodltategreminals, soldVer_Ea_Bb_Ole per MIL–-S4.T0D-750 Vdc
y _{Collector CMuerrtehnot d—2C0o2n6tinuous I C}
• Polarity : Indicated by cathode band
–500
mAdc
0.031(0.8) Typ.
0.024(0.6)
3
COLL0E.C03T1O(0R.8) Typ.
1
BASE
Dimensions in inches and (millimeters)
r _{• Mounting Position : Any}
THERMAL CHARACTERISTICS
a • Weight : Approximated 0.011 gram
Characteristic
Symbol
Max
Unit
2
EMITTER
TotalMDeAvXiceIMDUissMipaRtioAnTFIRN–G5SBoAaNrdD, (1E) LECTRICAPLD CHARAC2T2E5 RISTICmSW
in _{Ratings at 2T5A℃= 2a5m°Cbient temperature unless otherwise specified.}
Single phas^De^eh^raa^tl^ef w^aa^bv^oe^v,^e6²0⁵H^°Cz, resistive of inductive load.
1.8
mW/°C
For capaciti^Tv^he^el^ro^ma^ad^l, ^Rde^er^sa^iste^tacⁿu^cerr^,e^Jn^utⁿb^cy^tio2ⁿ0%^{to Ambient}
R θJA
556
°C/W
Total Device Dissipation
lim ^RATINGS
SYMBOL
FM12^P0-^DMH
FM130-MH
300
FM140-MH
mW
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH
UNIT
Marking
Alumina
Code
Substrate,
(2)
TA
=
25°C
12
13
14
15
16
18
10
115 120
Derate above 25°C
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30 ^2.440
m₅₀W/°C ₆₀
80
100
150
200 Volts
Thermal Resistance, Junction to Ambient
Maximum RM_JS_unV_co_til_ota_ng_ae_{nd Storage Temperature}
VRMS
1^R4^θJA
21
417
28
T J , T stg
–55 to +150
°C/W
35_°C
42
56
70
105
140 ^Volts
e _{Maximum DC Blocking Voltage}
VDC
20
30
40
50
60
80
100
150
200 ^Volts
r _{Maximum Average Forward Rectified Current}
IO
DEVICE MARKING
P ^Peak
Forward Surge Current 8.3 ms
MMBTA55LT1= 2H ;
s_Min_Mgle_Bh_Ta_Alf₅s₆in_Le_T-w₁a₌ve_2GMIFSM
1.0
Amp
30
Amp
superimposed on rated load (JEDEC method)
Typical TEhLerEmCalTRReIsCisAtaLncCe H(NAotReA2)CTERISTICS (TA =RΘ25JA°C unless otherwise noted.)
40
℃/W
Typical Junction Capacitance (Note 1)
CJ
120
PF
Characteristic
Operating Temperature Range
TJ
-55 to +12^S5^ymbol
Min
Max
U_-5n₅it _{to +150}
℃
Storage OTeFmFpeCraHtuAreRRAaCngTeERISTICS
TSTG
- 65 to +175
℃
Collector–Emitter Breakdown Voltage (3)
V (BR)CEO
Vdc
Maximum Fo⁽r^Iw^Ca⁼rd^–V^1C.o^0HltamAgRAeA^daC^ct^,T1IE.0BR=AIS⁰DTC^)ICS
SYMBO_ML _MFM_B1_T2_A0-₅M₅H FM130-MH FM140-MH FM1_–5₆0₀-MH FM160-_—MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
MMBTA56
–80
—
Maximum Average Reverse Current at @T A=25℃
Rated DC Bl^Eoc^mkⁱi^tn^tg^erV^–o^Bl^ata^sg^ee^{Breakdown V}@^olT^taA^g=^e125℃
IR
0.5
V (BR)EBO
–4.0
10_—
Vdc
mAmp
(I E = –100 µAdc, I C = 0 )
NOTES: _{Collector Cutoff Current}
1- Measured a₍t_V1 _CM_EH₌Z_–a₆n₀d_Va_dp_cp_,lie_Id_B r₌ev₀e₎rse voltage of 4.0 VDC.
I CEO
—
–0.1
µAdc
2- Thermal Re_Cs_ois_lt_la_en_cc_te_orF_Cro_um_toJ_fu_f n_Cc_uti_ro_rn_ento_t Ambient
I _CBO
µAdc
( V CB = –60Vdc, I E= 0)
MMBTA55
—
–0.1
( V CB = –80Vdc, I E= 0)
MMBTA56
—
–0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.