MMBTA4XLT1 Datasheet, PDF (2/4 Pages) WILLAS ELECTRONIC CORP – High Voltage Transistors

WILLAS
FM120-M+
MMBTA4xLT^T1^HRU
1.0A S_HUR_iF_gA_hCE_VMO_oU_lN_taT S_gC_eHO_TTT_rK_aY_nB_sAR_isRI_tE_oR _rR_sECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
• Lbo^EewtLteEpr^Crroe^Tfvi^Rlee^IrCssu^{AerLlfeaCackeHamAgoeR}u^AcnuCtrer^Tde^EnaRtpaIp^SnliTdcIat^ChtiSeorn(mTian^Alor=red^{2se5isr°Cttaonunclee.ss otherwise noted) (Continued)}
SOD-123H
optimize board space.^{Characteristic}
Symbol
Min
Max Unit
• LoOwNpCowHeArRloAsCs,ThEigRhISefTfiIcCieSnc(3y.)
• High c_Du_Crr_Cen_ut_rrc_ea_np_{t G}ab_ai_inlity, low forward voltage drop.
• High s₍u_{I C}rg₌e₁c_.0ap_ma_Ab_di_cli_,ty_V. _{CE = 10 Vdc)}
Both Types
• Guard₍r_Ii_Cn₌g ₁fo₀r_mo_Ave_dr_cv_, o_Vlt_Ca_Eg₌e₁p₀r_Vot_de_cc₎tion.
Both Types
• Ultra high-speed switching.
MMBTA42
•
•
Silicon_(I e_C p₌it₃a₀x_mia_Al p_dcla_, n_Va_Cr_Ec₌h₁ip₀, _Vm_de_ct₎al silicon junction._MMBTA43
Lead-free parts meet environmental standards of
0.146(3.7)
h_FE
0.130(3.3)
0.012(0.3) Typ.
––
25
—
40
—
40
—
0.071(1.8)
0.056(1.4)
40
—
MIL-STD-19500 /228
• RoHS ^Cpr^oo^lld^eu^cc^tot ^rf^–o^Er ^mpa^itc^tek^rin^Sg^ac^tuo^rd^ae^tiosⁿuf^Vfi^ox^lt"^aG^g"^e
Haloge(In_Cf=re2e0pmroAdduc,t IfoBr=p2a.c0kmingAdcco)de suffix "H"
MMBTA42
V_CE(sat)
Vdc
—
0.5
Mechanical data
MMBTA43
• Epoxy^B:^aU^seL^–9^E4^m-V^itt0^erra^St^ae^td^urf^ala^tiomⁿe^Vr^oe^ltt^aa^gr^edant
(I _C = 20 mAdc, I _B= 2.0 mAdc)
• Case : Molded plastic, SOD-123H
•
Te^Sr^Mm^Ain^La^Lls^–:^SP^Il^Gat^Ned^At^Ler^Cm^Hin^Aa^Rls^A, s^Co^Tld^Ee^Rra^ISb^Tle^ICpe^Sr
,
MIL-STD-750
V
BE(sat)
0.031(0.8) Typ.
—
0.5
0.040(1.0)
—
0.9
Vd⁰c^.024(0.6)
0.031(0.8) Typ.
CurreMnte–thGoadin2–B02an6dwidth Product
• Polarit⁽y^V: ^CI^En⁼di²c⁰at^Ve^dd^cb^, y^{I C}c⁼at¹h⁰o^md^Ae^,b^fa⁼n¹d^{00 MHz)}
Collector – Base Capacitance
• Mounting Position : Any
(V CB= 20 Vdc, I E = 0, f = 1.0 MHz)
• Weight : Approximated 0.011 gram
MMBTA42
MMBTA43
f_T
50
—
MHz
Dimensions in inches and (millimeters)
C _cb
pF
—
3.0
—
4.0
3. Puls_Me_ATe_Xs_It_M: P_Uul_Mse W_RAidt_Th_I<_N3_G00_Sµ_As,_ND_Duty_EC_Ly_Ecl_Ce <_TR2._I0_C%_A. _{L CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14
15
16
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
18
10
115 120
80
100
150
200 Volts
56
70
105
140 ^Volts
VDC
20
30
40
50
60
80
100
150
200 ^Volts
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.