MMBTA4XLT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – High Voltage Transistors

WILLAS
FM120-M+
MMBTA4xLT^T1^HRU
1.0A SHURigFAhCEVMoOUltNaTgSCeHOTTrTaKYnBsAiRsRtIEoRrRsECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low^ƽp^Rro^ofi^Hle^Ssu^pr^rfa^oc^de^um^cto^fu^on^rte^pd^aa^cp^kpⁱⁿli^gca^cti^oo^dn^ein^so^urd^ffe^ixr t^"o^G"
optimHizaelboogaernd sfrpeaecep. roduct for packing cod_.e suffix "H"
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• ^DH^Eig^Vh^Is^Cu^Erg^Me ^Aca^Rp^Ka^Ib^Nil^Gity^A. ^{ND ORDERING INFORMATION}
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• Guar_Dd_eri_vn_ig_cefor overvoltag_Me_ap_rkro_inte_gction. _Package
• Ultra high-speed switching.
Shipping
• SiliMcoMnBeTpAit4a2xLiTa1l planar chip1,Dmetal silicSoOnTju-2n3ction. 3000/Tape&Reel
• Lead-free parts meet environmental standards of
MILM-SMTBDT-A14935L0T01 /228 M1E
SOT-23 3000/Tape&Reel
• RoHS product for packing code suffix "G"
MHaAloXgIeMnUfrMeeRpAroTdIuNcGt fSor packing code suffix "H"
Mechanical data
Value
• Epoxy : U^RL^a9^t4ⁱⁿ-V^g0 rated flame reta^Srd^yman^bt^{ol MMBTA42 MMBTA43 Unit}
• CasCeol:leMcotolrd–eEdmpitltaesr tVico,ltSagOeD-123H V CEO
300
200 Vdc
,
• TerCmoinlleaclsto:rP–BlaatseedVtoelrtmagienals, soldeVraCbBlOe per M30IL0-STD-720500 Vdc
Emitter–B^Ma^es^te^hV^oo^dlt²a⁰g²e⁶
V EBO
• Polarity : Indicated by cathode band
Collector Current — Continuous I C
• Mounting Position : Any
6.0
6.0
500
Vdc
mAdc
0.071(1.8)
0.056(1.4)
SOT–23
0.031(0.8) Typ.
1
BASE
0.040(1.0)
0₃.024(0.6)
COLLECTOR
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
2
EMITTER
• TWHeEigRhMt :AALppCrHoxAimRaAtCedTE0.R0I1S1TgIrCaSm
Cha_Mra_Ac_Xte_Ir_Mist_Uic_{M RATINGS AND ELECTRIC}S_Ay_Lmb_Co_Hl _ARACTM_Ea_Rx _ISTICSUnit
Ratings at 25^T℃^otala^Dm^eb^vie^icn^et ^Dte^ism^sp^ipe^ar^ta^iotuⁿre^FRun^–le⁵s^Bs^oo^at^rh^de^,r⁽w¹i⁾se specified. _{P D}
Single phase^Th^Aa⁼lf²w⁵a^°Cve, 60Hz, resistive of inductive load.
225
mW
For capacitiv^De^elo^raa^td^e, ^ad^be^ora^vt^ee²c⁵u^°r^Crent by 20%
1.8
mW/°C
Thermal Resistance, Junction to Ambient
R θJA
556
°C/W
Total Dev^Ric^Ae^TD^Ii^Nss^Gip^Sation
Marking Code_{Alumina Substrate, (2) TA = 25°C}
Maximum Rec_Dur_ere_ran_tt_eP_ae_ba_ok_vR_ee₂v₅e_°rs_Ce Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12^{P D} 13
30₁0₄
15^mW 16
18
10
115 120
VRRM
20
30
2⁴.4⁰
5_m0 _W/°C 60
80
100
150
200 Volts
Maximum RMS_ThV_eo_rl_mta_age_{l Resistance, Junction to Ambient}VRMS
14_{R θJA} 21
4²1⁸7
35_°C/W 42
56
70
105
140 ^Volts
Maximum DC _JB_ulo_nc_ck_tin_og_n V_ao_nl_dta_Sge_{torage Temperature}
VDC
T²⁰J , T stg ³⁰ –55 to⁴⁰+150 ⁵⁰ °C ⁶⁰
80
100
150
200 ^Volts
Maximum_EA_Lve_Era_Cg_Te_RF_Io_Crw_Aa_Lrd_CR_Hec_Atif_Rie_Ad _CC_Tur_Ere_Rnt_ISTICS
(TA
IO
= 25°C
unless
otherwise
noted.)
Peak Forward Surge Current 8_C.3_hm_ars_as_cin_tg_el_re_ish_ta_iclf sine-wave
superimposed on rated load (JEDEC method)
Typical Th^Oer^Fm^Fal^CR^Hes^Ais^Rta^Anc^Ce^T(N^Eo^Rte^IS2^T) ^ICS
IFSM
RΘJA
Symbol
Typical JunctioCnoClleacptaocr–itaEnmceitte(Nr oBtere1a)kdown Voltage(3) CJ
Operating Tem_(Ip_Ce₌ra₁tu_.0re_mR_Aan_dg_ce_{, I B = 0)}
Storage Temperature Range
MM^TB^JTA42
MM^TSB^TT^GA43
V (BR)CEO
-55 to +125
Min
300
200
1.0
Max 30 Unit
40
120 _Vdc
—
-55 to +150
—^{- 65 to +175}
Amps
Amps
℃/W
PF
℃
℃
Collector–Base Breakdown Voltage
V (BR)CBO
Vdc
(I C= 1^C00^HAµ^RA^Adc^C,^TI^EE^R=^I0^S)^TICS
Maximum Forward Voltage at 1.0A DC
M^SM^YMBT^BA^O4^L2^{FM120-MH FM130-MH FM140-MH}3^F0^M0^{150-MH FM}—^{160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
MM^VB^FTA43
0.50
200 ^0.70 —
0.85
0.9
0.92 Volts
Maximum Ave_Era_mg_ie_tteR_re_–v_Be_ars_se_e C_Bu_rerr_ae_kn_dt _oa_wt _n@_VT_olA_ta=_g2_e5℃
IR
Rated DC Bloc_(Ik_Ein₌g₁V₀o₀lta_µg_Ae_{dc, I C= 0)} @T A=125℃
0.5
V (BR)EBO
6.0
— ₁₀ Vdc
mAmp
NOTES:
Collector Cutoff Current
1- Measured at⁽1^VM^CH^BZ⁼ a²n⁰d⁰a^Vp^dp^cli^,ed^I r^Ee⁼ve⁰r⁾se voltage of 4.0 V^MDC^M.^BTA42
2- Thermal Res⁽is^Vtan^Cc^B=e F¹r⁶o⁰m^VJ^du^cn^,ct^Iio^En⁼to⁰⁾Ambient
MMBTA43
Emitter Cutoff Current
I CBO
I EBO
µAdc
—
0.1
—
0.1
µAdc
( V EB= 6.0Vdc, I C= 0)
MMBTA42
—
0.1
( V EB= 4.0Vdc, I C= 0)
MMBTA43
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
—
0.1
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.