MMBD4448HTX Datasheet, PDF (2/2 Pages) WILLAS ELECTRONIC CORP – SOT-523 Plastic-Encapsulate Diodes

WILLAS
MMBD4448^FH^MT_T¹x_H²_R⁰_U^-M+
SOT-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
O u t l i n e D r a w i n g • Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
SOD-123H
SOT-523
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
.067(1.70) _{• Case : Molded plastic, SOD-123H}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.059(1.50) _{y Method 2026}
• Polarity : Indicated by cathode band
r _{• Mounting Position : Any}
a _{• Weight : Approximated 0.011 gram}
0.031(0.8) Typ.
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
in ^{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.014(0.35) _{For capacitive load, derate current by 20%}
..004335((10..1900)) _lim^{.010(0.25) .008(0.20) RATINGS}
Marking Code
.004(0.10) _{Maximum Recurrent Peak Reverse Voltage}
Maximum RMS Voltage
e _{Maximum DC Blocking Voltage}
r _{Maximum Average Forward Rectified Current}
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200 V
VRMS
14
21
28
35
42
56
70
105
140 ^V
VDC
20
30
40
50
60
80
100
150
200 ^V
IO
1.0
A
P _{Peak Forward Surge Current 8.3 ms single half sine-wave IFSM}
30
A
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Operating Tem_.0pe₀ra₄tu₍re₀R_.a₁n₀ge_)MAX.
Storage Temperature Range
CJ
TJ
TSTG
-55 to +125
120
- 65 to +175
-55 to +150
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 V
.014(0.35) ^{Maximum Average Reverse Current at @T A=25℃}
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
m
10
NOTES:
.006(0.15)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
Dimensions in inches and (millimeters)
WILLAS ELECRTReOv.NDIC CORP
WILLAS ELECTRONIC CORP.