MMBD4448HTX Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – SOT-523 Plastic-Encapsulate Diodes

WILLAS _{SOT-523 Plastic-Encapsulate Diodes}
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
-20V-
MMBD4448^FH^MT_T¹x_H²_R⁰_U^-M+
200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
SWITCHING DIODE
FEATUR^FE^eS^atures
• Batch process design, excellent power dissipation offers
z Fast Sbewttietcr hreinvegrsSepleeaekdage current and thermal resistance.
z For ^•G^Le^on^we^pr^ra^ol^fiP^leu^sr^up^rfo^as^ce^{e m}S^ow^uiⁿtc^teh^din^ag^ppA^licp^ap^til^oicⁿaⁱtⁿio^on^rds^{er to}
optimize board space.
z High• LCoownpdouwcetralnoscse, high efficiency.
z Pb-F^• r^He^ige^hp^ca^uc^rrk^ea^ntg^ce^apis^aba^ilv^itya^,i^ll^oa^wb^fl^oe^{rward voltage drop.}
RoH^•S^Hip^gr^ho^sd^uu^rgc^et f^co^ar^pp^abaⁱc^lik^tyi^.ng code suffix ”G”
• Guardring for overvoltage protection.
Halo_•g_Ue_ltn_rafr_he_ige_hp_-sr_po_ed_eu_dc_st_wf_io_tcr_hp_ina_gc_.king code suffix “H”
z Mois• tSuirliecoSneenpsitiatixviaitlyplLaneavreclh1ip, metal silicon junction.
Package outSlOinTe-523
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
y _{Method 2026}
r _{Maximum• PoRlaartiitny :gIsndaicnadtedEbley ccatrthicoadel Cbahnadracteristics, Single Diode @Ta=25D℃imensions in inches and (millimeters)}
• Mountin_Pg_arP_ao_msi_eti_to_en_r : Any
Symbol
Limit
Unit
a _{Non-Rep•eWtietiivgehtP:eAapkprRoexvimearsteedV0o.0lt1a1ggeram}
V_RM
100
V
in ^{Peak RepetitiveMPAeaXkIMRUevMerRseAVToINltGagSe AND ELVERCRMTRICAL CHARACTERISTICS}
WoRraktiinnggs aPte2a5k℃Reamvebriesnet tVeomlptaegraeture unless otherwiVseRWspMecified.
80
V
DC^SiB^ngl^lo^ec^pk^hi^an^sg^{e h}V^ao^lflt^wa^ag^ve^{e, 60Hz, resistive of inductive loa}V^dR^.
For capacitive load, derate current by 20%
lim ^{RMS Reverse Voltage}
V_R(RMS)
57
V
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Fo_Mr_aw_rka_inr_gd_CC_odo_entinuous Current
I_FM
12
13
14 ⁵⁰⁰15
16
18
10 ^mA 115
120
AMvearxaimguemRReeccutirfrieendt POeauktpRuevteCrsuerVreolntatge
VRIROM
20
30
40 25050
60
80
100 mA 150
200 V
e _{PeMaakximFuomrwRaMrSdVSoultarggee Current @t=1.0μs}
Maximum DC Blocking Voltage
@t =1.0s
r _{Maximum Average Forward Rectified Current}
Power Dissipation
VRMS
14
21
28 _4.035
42
V^IFD^SC^M
20
30
40 _1.550
60
56
70
105
140 ^V
80
100 ^A 150
200 ^V
P^IO_D
150
1.0
mW
A
P _{ThPeearkmFaorlwRaredsSiusrtgaenCcuerreJnut 8n.c3 tmiosnsintgoleAhmalfbsiineen-wtave IRFSθMJA}
833
30
℃/W
A
superimposed on rated load (JEDEC method)
St_To_yr_pa_icg_ale_TT_hee_rm_map_le_Rr_ea_st_iu_str_ae_{nce (Note 2)}
RΘ^TJ^SA^TG
-55 ~+150
40
℃
℃
Typical Junction Capacitance (Note 1)
Ele_Oc_petr_raic_tina_gl_TR_ema_pt_ein_rag_tus_re @_RanT_ga_e=25℃
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
Parameter
TSTG
- 65 to +175
Symbol Min Typ Max Unit
Conditions
Reverse breakdow^CHn^Av^Ro^Al^Cta^Tg^Ee^RISTICS
Maximum Forward Voltage at 1.0A DC
SY_VM_RBOL FM1₈20₀-MH FM130-MH FM140-MH FM150-M_VH FM160-MH FM180-M_IH_RF₌M₂1_.510_μ0-M_AH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
Maximum Average Reverse Current at @T A=25℃
V_F1
IR
0.62
0.72
V
0.5
I_F=5mA
m
Rated DC Blocking Voltage
@T A=125℃ _VF2
0.855
V
10
I_F=10mA
Forward voltage
NOTES:
V_F3
1.0
V
I_F=100mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 V_VD_FC₄.
2- Thermal Resistance From Junction to Ambient
1.25
V
I_F=150mA
Reverse current
I_R1
0.1
μA
V_R= 70V
I_R2
25
nA
V_R=20V
Capacitance between terminals
C_T
3.5
pF
V_R=6V,f=1MHz
Reverse recovery time
t_rr
4
ns
V_R=6V,I_F=5mA
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.